Our Faculty

Year : 2023

Cyberbullying research — Alignment to sustainable development and impact of COVID-19: Bibliometrics and science mapping analysis

Cite this Research Publication : Krishnashree Achuthan, Vinith Kumar Nair, Robin Kowalski, Sasangan Ramanathan, Raghu Raman, Cyberbullying research — Alignment to sustainable development and impact of COVID-19: Bibliometrics and science mapping analysis, Computers in Human Behavior (ABDC-A, Scopus-Q1, IF-8.9), Volume 140, March 2023, 107566, DOI: 10.1016/j.chb.2022.107566

Publisher : Elsevier

Year : 2009

Highly Conformal ALD of ZrO2 at Higher Process Temperatures than the Conventinal TEMAZr-Based Process

Cite this Research Publication : Y. Senzaki, Okuyama, Y., Kim, G., Kim, H. Young, Barelli, C., Lindner, J., Karim, Z., and Dr. Sasangan Ramanathan, “Highly Conformal ALD of ZrO2 at Higher Process Temperatures than the Conventinal TEMAZr-Based Process”, ECS Transactions, vol. 25, pp. 201–209, 2009.

Publisher : ECS Transactions

Year : 2007

High Performance ALD Reactor for High-k Films Films – Progress in ALD Equipment and Processing

Cite this Research Publication : J. Dalton, Kim, H. Young, Zhang, Z., Seidel, T., Karim, Z., and Dr. Sasangan Ramanathan, “High Performance ALD Reactor for High-k Films”, ECS Transactions, vol. 3, pp. 27–36, 2007.

Publisher : ECS Transactions, The Electrochemical Society

Year : 2006

Advanced Metal Gate Electrode Options Compatible with ALD and AVD® HfSiOx-based Gate Dielectrics

Cite this Research Publication : Z. Karim, Biossiere, O., Lohe, C., Zhang, Z., Park, W., Manke, C., Baumann, P. K., Dalton, J., Dr. Sasangan Ramanathan, Lindner, J., and , “Advanced Metal Gate Electrode Options Compatible with ALD and AVD® HfSiOx-based Gate Dielectrics”, ECS Transactions, vol. 3, pp. 363–374, 2006.

Publisher : The Electrochemical Society

Year : 2005

ALD of Hafnium Oxide Thin Films from Tetrakis (ethylmethylamino) Hafnium and Ozone

Cite this Research Publication : X. Liu, Dr. Sasangan Ramanathan, Longdergan, A., Srivastava, A., Lee, E., Seidel, T. E., Barton, J. T., Pang, D., and Gordon, R. G., “ALD of Hafnium Oxide Thin Films from Tetrakis (ethylmethylamino) Hafnium and Ozone”, Journal of The Electrochemical Society, vol. 152, pp. G213–G219, 2005.

Publisher : Journal of The Electrochemical Society, The Electrochemical Society

Year : 2003

Progress and Opportunities in Atomic Layer Deposition

Cite this Research Publication : Tom Seidel, Londergan, A., Winkler, J., Liu, X., and Dr. Sasangan Ramanathan, “Progress and Opportunities in Atomic Layer Deposition”, vol. 46, pp. 67-70, 2003.

Year : 2002

EnergyGap and Band Alignment for (HfO2)x(Al2O3)1−x(HfO2)x(Al2O3)1−x on (100) Si

Cite this Research Publication : M. F. Li H. Y. Yu, Dr. Sasangan Ramanathan, Cho, B. Jin, Yeo, C. C., Joo, M. S., Kwong, D. - L., Pan, J. S., Ang, C. H., and Zheng, J. Z., “EnergyGap and Band Alignment for (HfO2)x(Al2O3)1−x(HfO2)x(Al2O3)1−x on (100) Si”, Applied Physics Letters , vol. 81, pp. 376-378, 2002.

Publisher : Applied Physics Letters

Year : 2002

Thermal Stability of (HfO2)x(Al2O3)1−x on Si

Cite this Research Publication : H. Y. Yu, Wu, N., Li, M. F., Chunxiang Zhu, Byung Jin Cho, Kwong, D. - L., Tung, C. H., Pan, J. S., Chai, J. W., Wang, W. D., Chi, D. Z., Ang, C. H., Zheng, J. Z., and Dr. Sasangan Ramanathan, “Thermal Stability of (HfO2)x(Al2O3)1−x on Si”, Applied Physics Letters, vol. 81, pp. 3618-3620, 2002.

Publisher : Applied Physics Letters

Year : 2002

Process Optimization in Atomic Layer Deposition of High-K Oxides for Advanced gate Stack Engineering

Cite this Research Publication : A. Londergan, Dr. Sasangan Ramanathan, Rassiga,, Hinzay, R., Winkler, J., Velasco, H., Matthysse, L., Seidel, T. E., Ang, C. H., Yu, H. Y., and Li, M. F., “Process Optimization in Atomic Layer Deposition of High-k Oxides for Advanced Gate Stack Engineering”, Conference Proceedings, the Society for Solid State and Electrochemical Science and Technology. pp. 163-176, 2002.

Publisher : Society for Solid State and Electrochemical Science and Technology

Year : 1999

Stresses in Sputtered RuOx Thin Films

Cite this Research Publication : S. B. Desu, Vijay, D. P., Dr. Sasangan Ramanathan, Bhatt, H. D., and Tirumala, S., “Stresses in Sputtered RuOx Thin Films”, Thin Solid Films, vol. 350, pp. 21 - 29, 1999.

Publisher : Thin Solid Films

Year : 1999

Transition Metal Bimetallic Oxycarbides: Synthesis, Characterization, and Activity Studies

Cite this Research Publication : S. T. Oyama, C. Yu, C., and Dr. Sasangan Ramanathan, “Transition Metal Bimetallic Oxycarbides: Synthesis, Characterization, and Activity Studies”, Journal of Catalysis, vol. 184, pp. 535 - 549, 1999.

Publisher : Journal of Catalysis

Year : 1998

Characterization of Ba0.6Sr0.4TiO3 Thin Films with Mg Additive Fabricated by Metalorganic Decomposition Technique

Cite this Research Publication : P. C. Joshi, Dr. Sasangan Ramanathan, Desu, S. B., Stowell, S., and Sengupta, S., “Characterization of Ba0.6Sr0.4TiO3 Thin Films with Mg Additive Fabricated by Metalorganic Decomposition Technique”, Integrated Ferroelectrics, vol. 19, pp. 141-148, 1998.

Publisher : Taylor & Francis

Year : 1998

Synthesis, Characterization, and Reactivity Studies of Supported Mo2C with Phosphorus Additive

Cite this Research Publication : B. Dhandapani, Dr. Sasangan Ramanathan, Yu, C. C., Frühberger, B., Chen, J. G., and Oyama, S. T., “Synthesis, Characterization, and Reactivity Studies of Supported Mo2C with Phosphorus Additive”, Journal of Catalysis, vol. 176, pp. 61 - 67, 1998.

Publisher : Journal of Catalysis

Year : 1998

New Catalysts for Hydroprocessing: Bimetallic Oxynitrides MI–MII–O–N (MI, MII=Mo, W, V, Nb, Cr, Mn, and Co): Part I. Synthesis and Characterization

Cite this Research Publication : C. C. Yu, Dr. Sasangan Ramanathan, and Oyama, S. T., “New Catalysts for Hydroprocessing: Bimetallic Oxynitrides MI–MII–O–N (MI, MII=Mo, W, V, Nb, Cr, Mn, and Co): Part I. Synthesis and Characterization”, Journal of Catalysis, vol. 173, pp. 1 - 9, 1998.

Publisher : Journal of Catalysis

Year : 1998

New Catalysts for Hydroprocessing: Bimetallic Oxynitrides MI-MII-O-N (MI, MII= Mo, W, V, Nb, Cr, Mn, and Co) Part II: Reactivity Studies

Cite this Research Publication : Dr. Sasangan Ramanathan, Oyama, S. T., and C., C., “New Catalysts for Hydroprocessing: Bimetallic Oxynitrides MI-MII-O-N (MI, MII= Mo, W, V, Nb, Cr, Mn, and Co) Part II: Reactivity Studies”, Journal of Catalysis, pp. 10-16, 1998.

Publisher : Journal of Catalysis

Year : 1997

Microstructural and Electrical Characteristics of Rapid Thermally Processed (Ba1—xSrx)TiO3 Thin Films Prepared by Metalorganic Solution Deposition Technique

Cite this Research Publication : P. C. Joshi, Dr. Sasangan Ramanathan, Desu, S. B., and Stowell, S., “Microstructural and Electrical Characteristics of Rapid Thermally Processed (Ba1—xSrx)TiO3 Thin Films Prepared by Metalorganic Solution Deposition Technique”, physica status solidi (a), vol. 161, pp. 361-370, 1997.

Publisher : physica status solidi (a)

Year : 1997

SrBi2Ta2O9 Thin Films made by Liquid Source Metal-organic Chemical Vapor Deposition

Cite this Research Publication : Y. Zhu, Desu, S. B., Tingkai Li, Dr. Sasangan Ramanathan, and Nagata, M., “SrBi2Ta2O9 Thin Films made by Liquid Source Metal-organic Chemical Vapor Deposition”, Journal of Materials Research, vol. 12, pp. 783–792, 1997.

Publisher : Journal of Materials Research, Cambridge University Press

Year : 1997

Bimetallic Nb−Mo Carbide Hydroprocessing Catalysts:  Synthesis, Characterization, and Activity Studies

Cite this Research Publication : C. C. Yu, Dr. Sasangan Ramanathan, Dhandapani, B., Chen, J. G., and S. Oyama, T., “Bimetallic Nb−Mo Carbide Hydroprocessing Catalysts:  Synthesis, Characterization, and Activity Studies”, The Journal of Physical Chemistry B, vol. 101, pp. 512-518, 1997.

Publisher : The Journal of Physical Chemistry B

Year : 1995

Synthesis and Reactivity of New Bimetallic Oxynitrides

Cite this Research Publication : S. T. Oyama, Dr. Sasangan Ramanathan, and Yu, C. C., “Synthesis and Reactivity of New Bimetallic Oxynitrides”, Preprints of Papers – American Chemical Society, Division of Fuel Chemsirty, vol. 998, 1995.

Publisher : Preprints of Papers – American Chemical Society, Division of Fuel Chemsirty

Year : 1995

New Catalysts for Hydroprocessing: Transition Metal Carbides and Nitrides

Cite this Research Publication : Dr. Sasangan Ramanathan and Oyama, S. T., “New Catalysts for Hydroprocessing: Transition Metal Carbides and Nitrides”, The Journal of Physical Chemistry, vol. 99, pp. 16365-16372, 1995.

Publisher : The Journal of Physical Chemistry

Year : 1994

Structural, Surface, and Catalytic Properties of a New Bimetallic V-Mo Oxynitride Catalyst for Hydrodenitrogenation

Cite this Research Publication : C. C. Yu, Dr. Sasangan Ramanathan, Sherif, F., and S. Oyama, T., “Structural, Surface, and Catalytic Properties of a New Bimetallic V-Mo Oxynitride Catalyst for Hydrodenitrogenation”, The Journal of Physical Chemistry, vol. 98, pp. 13038-13041, 1994.

Publisher : The Journal of Physical Chemistry

Year : 2013

Atomic Layer Deposition of Materials for Alternate Non-Volatile Memory Technologies

Cite this Research Publication : Dr. Sasangan Ramanathan, “Atomic Layer Deposition of Materials for Alternate Non-Volatile Memory Technologies”, Invited Talk at the 13th Atomic Layer Deposition Conference, American Vacuum Society. 2013.

Publisher : Invited Talk at the 13th Atomic Layer Deposition Conference, American Vacuum Society

Year : 2012

Deposition and Electrical Characterization of ALD GexSbyTez for Future Applications

Cite this Research Publication : L. Yang, Weber, U., Maumann, P. K., Karim, Z., Dr. Sasangan Ramanathan, Lu, B., Czubatyj, W., Hudgens, S., and Lowrey, T., “Deposition and Electrical Characterization of ALD GexSbyTez for Future Applications”, 12th International Conference on Atomic Layer Deposition, American Vacuum Society. 2012.

Publisher : American Vacuum Society

Year : 2012

Advances in ALD GST Process and Equipment for sub-20nm PCRAM Devices: Precursor delivery, GST Gapfill and Electrical Characterization

Cite this Research Publication : Z. Karim, Yang, L., Mack, J., Liu, M., Weber, U., Baumann, P., Dr. Sasangan Ramanathan, Lu, B., Czubatyj, W., Hudgens, S., and , “Advances in ALD GST Process and Equipment for sub-20nm PCRAM Devices: Precursor delivery, GST Gapfill and Electrical Characterization”, Conference Proceedings by the Society for Solid State and Electrochemical Science and Technology. The Electrochemical Society, 2012.

Publisher : The Electrochemical Society

Year : 2011

Material and Tool Design Challenges for Taking ALD to High Volume Production Beyond 30nm Node

Cite this Research Publication : B. Lu, Karim, Z., and Dr. Sasangan Ramanathan, “Material and Tool Design Challenges for Taking ALD to High Volume Production Beyond 30nm Node”, Symposium on Manufacturing and Technology Section MS2, American Vacuum Society. 2011.

Publisher : American Vacuum Society

Year : 2011

Atomic Layer Deposition of Smooth Phase Change GexSbyTez Layers on Planar and 3D Structures

Cite this Research Publication : L. Yang, Weber, U., Baumann, P. K., Mack, J., Karim, Z., Dr. Sasangan Ramanathan, and Lu, B., “Atomic Layer Deposition of Smooth Phase Change GexSbyTez Layers on Planar and 3D Structures”, International Conference on Atomic Layer Deposition, American Vacuum Society. 2011.

Publisher : American Vacuum Society

Year : 2010

Void Free Gapfill and Phase Change Memory Device Characterization of GeSbTe Films Deposited Using Atomic Vapor Deposition

Cite this Research Publication : P. Lehnen, Weber, U., Baumann, P. K., Senzaki, Y., Karim, Z., Dr. Sasangan Ramanathan, Lu, B., Reed, J., Czubatyj, W., Hudgens, S., and Dennison, C., “Void Free Gapfill and Phase Change Memory Device Characterization of GeSbTe Films Deposited Using Atomic Vapor Deposition”, 10th Atomic Layer Deposition Conference, American Vacuum Society. 2010.

Publisher : 10th Atomic Layer Deposition Conference, American Vacuum Society

Year : 2009

Needs for Next Generation Memory and Enabling Solutions based on Advanced Vaporizer Technology

Cite this Research Publication : Z. Karim, Senzaki, Y., . Y Kim, G., Barelli, C., Okuyama, Y., Kim, H. Y., Lu, B., Lindner, J., and Dr. Sasangan Ramanathan, “Needs for Next Generation Memory and Enabling Solutions based on Advanced Vaporizer Technology”, 9th Atomic Layer Deposition Conference, American Vacuum Society. 2009.

Publisher : 9th Atomic Layer Deposition Conference, American Vacuum Society

Year : 2009

Highly Conformal ALD of LaOx and La-based High-k Dielectric Films Using Novel Vaporizer Technology

Cite this Research Publication : C. Barelli, . Y Kim, H., . Y Kim, G., Senzaki, Y., Okuyama, Y., Mack, J., Lindner, J., Lu, B., Karim, Z., and Dr. Sasangan Ramanathan, “Highly Conformal ALD of LaOx and La-based High-k Dielectric Films Using Novel Vaporizer Technology”, Materials Research Society Spring Meeting. 2009.

Publisher : Materials Research Society Spring Meeting

Year : 2009

Development of Next Generation High-k Filmss – Challenges and Solutions

Cite this Research Publication : Dr. Sasangan Ramanathan, “Development of Next Generation High-k Filmss – Challenges and Solutions”, European Materials Research Society Spring Meeting. France, 2009.

Publisher : European Materials Research Society Spring Meeting

Year : 2008

Modulating Work Function for pFET with AVD Ru-based and TaN-based Gate Electrodes

Cite this Research Publication : C. Choi, Ando, T., Karim, Z., and Dr. Sasangan Ramanathan, “Modulating Work Function for pFET with AVD Ru-based and TaN-based Gate Electrodes”, 39th IEEE Semiconductor Interface Specialist Conference. 2008.

Publisher : 39th IEEE Semiconductor Interface Specialist Conference

Year : 2008

Atomic Level Solutions for Advanced Microelectronic Applications

Cite this Research Publication : Y. Senzaki, Seidel, T., McCormick, J., Kim, G. Y., Kim, H. Y., Karim, Z., Lu, B., Dr. Sasangan Ramanathan, Lindner, J., Silva, H., and Daulesberg, M., “Atomic Level Solutions for Advanced Microelectronic Applications”, in International Conference on Solid State and Integrated Circuit Technology, ICSICT 2008. , 2008.

Publisher : International Conference on Solid State and Integrated Circuit Technology, ICSICT 2008.

Year : 2008

Advances in ALD Equipment for sub-40nm Memory Capacitor Dielectrics: Precursor delivery, Materials and Processes

Cite this Research Publication : Z. Karim, Senzaki, Y., Dr. Sasangan Ramanathan, Lindner, J., Silva, H., and Dauelsberg, M., “Advances in ALD Equipment for sub-40nm Memory Capacitor Dielectrics: Precursor delivery, Materials and Processes”, ECS Transactions, vol. 16, pp. 125–134, 2008.

Publisher : ECS Transactions, The Electrochemical Society

Year : 2006

Atomic Vapor Deposition for Next Generation of Advanced Semiconductor Devices

Cite this Research Publication : M. Schumacher, Dr. Sasangan Ramanathan, Baumann, P. K., J. Linder, Lohe, C., Weber, U., Karim, Z., Londergan, A. R., and Seidel, T. E., “Atomic Vapor Deposition for Next Generation of Advanced Semiconductor Devices”, The Electrochemical Society, Meeting Abstracts, vol. 12. p. 487, 2006.

Publisher : The Electrochemical Society, Meeting Abstracts

Year : 2005

Evaluation of ALD Hafnium Silicate and Improvement of Reliability Characteristics

Cite this Research Publication : H. J. Lim, Kim, Y. S., Jung, H. S., Han, S. K., Kim, M. J., Lee, J. H., Lee, N. I., Chung, Y., Kim, H. Y., Lee, N. K., Dr. Sasangan Ramanathan, Seidel, T. E., and Boleslawski, M., “Evaluation od ALD Hafnium Silicate and Improvement of Reliability Characteristics”, Atomic Layer Deposition Conference. 2005.

Publisher : Atomic Layer Deposition Conference

Year : 2004

A High Deposition Rate Process Using Limited Optimized Reaction ALD”, Atomic Layer Deposition Conference

Cite this Research Publication : Kim G. Y., Srivastava A., Foote D., Londergan A., Karim Z., Seidel T. E., and Dr. Sasangan Ramanathan, “A High Deposition Rate Process Using Limited Optimized Reaction ALD”, Atomic Layer Deposition Conference”, Atomic Layer Deposition Conference, American Vacuum Society. pp. 1308-1311, 2004.

Publisher : Atomic Layer Deposition Conference, American Vacuum Society

Year : 2004

Atomic Layer Deposition of Aluminum Nitride Thin Films from Trimethyl Aluminum (TMA) and Ammonia

Cite this Research Publication : X. Liu, Dr. Sasangan Ramanathan, Lee, E., and Seidel, T. E., “Atomic Layer Deposition of Aluminum Nitride Thin Films from Trimethyl Aluminum (TMA) and Ammonia”, MRS Proceedings. Cambridge Univ Press, pp. 11-18, 2004.

Publisher : Cambridge Univ Press

Year : 2003

PATHWAYS FOR ADVANCED TRANSISTORS USING HAFNIUM–BASED OXIDES BY ATOMIC LAYER DEPOSITION

Cite this Research Publication : A. R. Londergan, Dr. Sasangan Ramanathan, Winkler, J., Seidel, T. E., Gutt, J., Brown, G., and Murto, R. W., “PATHWAYS FOR ADVANCED TRANSISTORS USING HAFNIUM–BASED OXIDES BY ATOMIC LAYER DEPOSITION”, Electrochemical Society. pp. 243-264, 2003.

Publisher : Electrochemical Society

Year : 2003

Atomic layer deposition of hafnium oxide thin films from tetrakis (dimethylamino) hafnium (TDMAH) and ozone

Cite this Research Publication : X. Liu, Dr. Sasangan Ramanathan, and Seidel, T. E., “Atomic layer deposition of hafnium oxide thin films from tetrakis (dimethylamino) hafnium (TDMAH) and ozone”, MRS Proceedings. Cambridge Univ Press, pp. 97-102, 2003.

Publisher : Cambridge Univ Press

Year : 2002

Pathways in Competitiveness for Atomic Layer Deposition

Cite this Research Publication : Dr. Sasangan Ramanathan, Seidel, T., Londergan, A., Lee, E., and Jansz, A., “Pathways in Competitiveness for Atomic Layer Deposition”, Proceedings of the AVS 3rd International Conference on Microelectronics and Interfaces. pp. 11-14, 2002.

Publisher : Proceedings of the AVS 3rd International Conference on Microelectronics and Interfaces

Year : 2002

Mass Production Worthy HfO2-Al2O3 Laminates Capacitor Technology using Hf Liquid Precursor for sub-100 nm DRAMS

Cite this Research Publication : J. H Lee, Kim J., Kim Y. S., S., J. H., Lee, N. I., Kang, H. K., Suh, K. P., Jeong, M. M., Hyun, K., Baik, H. S., Chung, Y. S., Liu, X., Dr. Sasangan Ramanathan, Seidel, T. E., Winkler, J., Londergan, A., Kim, H. Y., M., J., and Lee, N. K., “Mass Production Worthy HfO2-Al2O3 Laminates Capacitor Technology using Hf Liquid Precursor for sub-100 nm DRAMS”, Techincal Digest, International Electron Devices Meeting. pp. 221-224, 2002.

Publisher : Techincal Digest, International Electron Devices Meeting

Year : 1998

Synthesis and Reactivity of Niobium Molybdenum Oxycarbide – A New High Activity Hydroprocessing Catalys

Cite this Research Publication : S.T.Oyama, Dr. Sasangan Ramanathan, Schwartz, V., and Dhandapani, B., “Synthesis and Reactivity of Niobium Molybdenum Oxycarbide – A New High Activity Hydroprocessing Catalys”, Abstracts of Papers of the American Chemical Society, vol. 215. p. U228, 1998.

Publisher : Abstracts of Papers of the American Chemical Society

Year : 1996

Monograph of the Chemistry of Transition Metal Nitrides and Carbides

Cite this Research Publication : J. Wang, Dr. Sasangan Ramanathan, M. Castonguay, McBreen, P. H., and Oyama, S. T., “Monograph of the Chemistry of Transition Metal Nitrides and Carbides”, Chapman and Hall, London, 1996, p. 426.

Publisher : Chapman and Hall

Year : 1996

Chemisorption of CO and NO on Molybdenum Carbide Foils

Cite this Research Publication : J. Wang, Dr. Sasangan Ramanathan, Castonguay, M., and McBreen, P. H., “Chemisorption of CO and NO on Molybdenum Carbide Foils”, in Book Chapter in The Chemistry of Transition Metal Carbides and Nitrides, Springer, Dordrecht, 1996, pp. 426-438.

Publisher : Springer

Year : 2015

Method for Forming TiSiN Thin Film Layer by using Atomic Layer Deposition (Granted)

Cite this Research Publication : W. PARK, Jang, Y. J., Kim, G. Y., Lu, B., Siu, G., Silva, H., and Dr. Sasangan Ramanathan, “Method for Forming TiSiN Thin Film Layer by using Atomic Layer Deposition (Granted)”, U.S. Patent 9159608, US 14/391,2942015.

Publisher : Number 9159608

Year : 2015

Method for forming TiSiN thin film layer by using atomic layer deposition

Cite this Research Publication : W. PARK, Jang, Y. J., Kim, G. Y., Lu, B., Siu, G., Silva, H., and Dr. Sasangan Ramanathan, “Method for forming TiSiN thin film layer by using atomic layer deposition”, U.S. Patent US 14/391,2942015.

Year : 2011

Transient Enhanced Atomic layer Deposition (Granted)

Cite this Research Publication : Kim G. Y., Srivastava A., Seidel T. E., Londergan A. R., and Dr. Sasangan Ramanathan, “Transient Enhanced Atomic layer Deposition (Granted)”, U.S. Patent 79814732011.

Year : 2011

Transient Enhanced Atomic layer Deposition

Cite this Research Publication : Kim G. Y., Srivastava A., Seidel T. E., Londergan A. R., and Dr. Sasangan Ramanathan, “Transient Enhanced Atomic layer Deposition”, U.S. Patent 79814732011.

Year : 2006

Multi-single Wafer Processing Apparatus

Cite this Research Publication : J. Puchacz, Dr. Sasangan Ramanathan, Reyes, M., and Seidel, T., “Multi-single Wafer Processing Apparatus”, U.S. Patent US 11/224,7672006.

Year : 2005

Method and Apparatus for Introduction of Solid Precursors and Reactants into Supercritical Fluid Reactor

Cite this Research Publication : Gopinath, S., Van Cleemput, P. A., Schulberg, M., Ramanathan, S., Juarez, F., and Joyce, P., Method and Apparatus for Introduction of Solid Precursors and Reactants into Supercritical Fluid Reactor, US Patent, 6951765, 2005

Year : 2005

Multi-single Wafer Processing Apparatus (Filed)

Cite this Research Publication : J. Puchacz, Dr. Sasangan Ramanathan, Reyes, M., and Seidel, T., “Multi-single Wafer Processing Apparatus (Filed)”, U.S. Patent File Number 20060137609, US 11/224,7672005.

Year : 2005

Method for the Formation of Diffusion Barrier (Granted)

Cite this Research Publication : S. H. Lee and Dr. Sasangan Ramanathan, “Method for the Formation of Diffusion Barrier (Granted)”, U.S. Patent 6887781, US 10/425,3062005.

Publisher : Number 6887781, US 10/425,306, USA

Year : 2005

Method and Apparatus for Introduction of Solid Precursors and Reactants into a Supercritical Fluid Reactor (Granted)

Cite this Research Publication : S. Gopinath, Van Cleemput, P. A., Schulberg, M., Dr. Sasangan Ramanathan, Juarez, F., and Joyce, P., “Method and Apparatus for Introduction of Solid Precursors and Reactants into a Supercritical Fluid Reactor (Granted)”, U.S. Patent US Patent, 6951765, US 10/016,0172005.

Publisher : Number US Patent

Year : 2005

Methods and Apparatus for Cycle Time Improvements for Atomic Layer Deposition

Cite this Research Publication : X. Liu, Seidel, T., Lee, E., Doering, K., and Dr. Sasangan Ramanathan, “Methods and Apparatus for Cycle Time Improvements for Atomic Layer Deposition”, 2005.

Year : 2005

Method for the Formation of Diffusion Barrier

Cite this Research Publication : S. H. Lee and Dr. Sasangan Ramanathan, “Method for the Formation of Diffusion Barrier”, U.S. Patent US 10/425,3062005.

Year : 2005

Method and Apparatus for Introduction of Solid Precursors and Reactants into a Supercritical Fluid Reactor

Cite this Research Publication : S. Gopinath, Van Cleemput, P. A., Schulberg, M., Dr. Sasangan Ramanathan, Juarez, F., and Joyce, P., “Method and Apparatus for Introduction of Solid Precursors and Reactants into a Supercritical Fluid Reactor”, U.S. Patent US 10/016,0172005.

Year : 2004

Methods and Apparatus for Cycle Time Improvements for Atomic Layer Deposition (Filed)

Cite this Research Publication : X. Liu, Seidel, T., Lee, E., Doering, K., and Dr. Sasangan Ramanathan, “Methods and Apparatus for Cycle Time Improvements for Atomic Layer Deposition (Filed)”, U.S. Patent File Number 20050016956, 2004.

Year : 2004

Passivation Method for Improved Uniformity and Repeatability for Atomic Layer Deposition and Chemical Vapor Deposition (Granted)

Cite this Research Publication : A. R. Londergan, Dr. Sasangan Ramanathan, Winkler, J., and Seidel, T. E., “Passivation Method for Improved Uniformity and Repeatability for Atomic Layer Deposition and Chemical Vapor Deposition (Granted)”, U.S. Patent 6720259, US 10/262,9922004.

Year : 2004

Passivation Method for Improved Uniformity and Repeatability for Atomic Layer Deposition and Chemical Vapor Deposition

Cite this Research Publication : A. R. Londergan, Dr. Sasangan Ramanathan, Winkler, J., and Seidel, T. E., “Passivation Method for Improved Uniformity and Repeatability for Atomic Layer Deposition and Chemical Vapor Deposition”, U.S. Patent US 10/262,9922004.

Year : 2003

Formation of Metal Derived Layers by Simultaneous Deposition and Evaporation of Metals

Cite this Research Publication : Dalton, J., Powell, R. A., Kailasam, S. K., and Ramanathan, S., Formation of Metal Derived Layers by Simultaneous Deposition and Evaporation of Metals, US Patent, 6589887, 2003

Year : 2003

Formation of Metal-derived Layers by Simultaneous Deposition and Evaporation of Metal (Granted)

Cite this Research Publication : J. Dalton, Powell, R. A., Kailasam, S. K., and Dr. Sasangan Ramanathan, “Formation of Metal-derived Layers by Simultaneous Deposition and Evaporation of Metal (Granted)”, U.S. Patent 65898872003.

Year : 2003

Forming Metal-derived Layers by Simultaneous Deposition and Evaporation of Metal

Cite this Research Publication : J. Dalton, Powell, R. A., Kailasam, S. K., and Dr. Sasangan Ramanathan, “Forming Metal-derived Layers by Simultaneous Deposition and Evaporation of Metal”, U.S. Patent US 09/975,6122003.

Year : 2000

Ferroelectric Thin Film Composites made by Metalorganic Decomposition (Granted)

Cite this Research Publication : S. Sengupta, Stowell, S., Sengupta, L., Joshi, P. C., Dr. Sasangan Ramanathan, and Desu, S. B., “Ferroelectric Thin Film Composites made by Metalorganic Decomposition (Granted)”, U.S. Patent US Patent, 60715552000.

Year : 2000

Surface Modification of Semiconductors using Electromagnetic Radiation (Granted)

Cite this Research Publication : Dr. Sasangan Ramanathan, Khan A., and Foggiato G. A., “Surface Modification of Semiconductors using Electromagnetic Radiation (Granted)”, U.S. Patent 60157592000.

Year : 2000

Surface Modification of Semiconductors using Electromagnetic Radiation

Cite this Research Publication : Dr. Sasangan Ramanathan, A., K., and A., F. G., “Surface Modification of Semiconductors using Electromagnetic Radiation”, U.S. Patent 60157592000.

Year : 2000

Ferroelectric Thin Film Composites made by Metalorganic Decomposition

Cite this Research Publication : S. Sengupta, Stowell, S., Sengupta, L., Joshi, P. C., Dr. Sasangan Ramanathan, and Desu, S. B., “Ferroelectric Thin Film Composites made by Metalorganic Decomposition (Granted)”, U.S. Patent US Patent, 60715552000.

Year : 1999

Flash Evaporator (Granted)

Cite this Research Publication : Dr. Sasangan Ramanathan, Desu S. B., and Suchicital C.A., “Flash Evaporator (Granted)”, 1999.

Publisher : USA

Year : 1999

Flash Evaporator

Cite this Research Publication : Dr. Sasangan Ramanathan, B., D. S., and C.A., S., “Flash Evaporator”, 1999.