Publication

Abstract : Zinc oxide (ZnO) in its film form is an n-type semiconductor and has gained much interest in research community because of better optical properties such as uv-visible luminescence. It is a known fact that the intrinsic and extrinsic defects in ZnO control the optical and electrical properties. The ZnO films were deposited on glass substrates by sputtering using vacuum arc produced from pure metal plate of zinc (99.9%) in oxygen (O2) and nitrogen (N2) atmosphere. The XRD analysis revealed the role of oxygen ambience in crystallanity of the films. Photoluminescence (PL) measurement suggested that there is no chance of sharp reemission from both films. Transmission and sheet resistance studies infer that ZnO films deposited in oxygen ambience is a better candidate for transparent conducting electrodes. The optical band gaps were determined and found to be equal to 3.47 and 3.35 eV for films deposited in O2 and N2 atmosphere, respectively.