Publication

Abstract : Memristive devices are intensively studied for data storage and logic applications. Memory retention depends on switching speed of such resistive switching devices. Memristor has promising behavior to emulate neuron synapse for neuromorphic computing. Therefore this is very essential to study the switching characteristics and memristive behaviors of physical memristors. Here, a complete new analytical technique has adopted on numerical model of the memristor of Pt/TaOx/Ta physical memristor [1], fabricated in Hewlett-Packard (HP) Laboratories [2]. Several MATLAB simulations are done based on mathematical models to validate the physical experimental results and to know more about the properties of the memristor. This paper proceeds with the memristor emulator circuit design. The proposed emulator is suitable for emulating the physical TaO x memristor. A novel voltage-controlled memristive emulator circuit design is proposed utilizing NI Multisim with accessible minimal expense electronic components and a mathematical model of that emulator is proposed for future neuromorphic computing.