Publication

Abstract : CdSe:In films were prepared by electron beam evaporation technique using CdSe and In2Se3 (purity ∼99.9%) pellets. The crystal structure of the films with and without Indium, measured by X-ray diffraction (XRD), showed a typical wurtzite structure, higher Indium doping shifts the peak angle to higher side along with the broadening of the peaks. X-ray photoelectron spectroscopy (XPS) studies indicated binding energies corresponding to 54 eV (Se3d5/2), 444 eV (In 3d5/2), 411 eV (Cd 3d3/2), (Cd 3d5/2). Atomic force microscope (AFM) studies indicated a uniform surface.The grain size decreases with increase of In doping. A decrease in the band gap was observed with increase of dopant concentration. Resistivity of the films is in the range of 10-3 Ωcm. Carrier density was in the range of 1021 cm-3 for the films. The photolumineasenec spectra (PL) spectra indicated three peaks. The peak intensity decreases as the Indium concentration increases. (© 2011 WILEY-VCH Verlag GmbH amp; Co. KGaA, Weinheim)