Publisher : Advances in Intelligent Systems and Computing
Campus : Amritapuri
Year : 2016
Abstract : This report describes the SNM calculation and analysis of SRAM cell which are obtained from simulations performed in Cadence Virtuoso 90 nm technology. The SRAM cell structure is implemented with a compact structure of six transistors. Static noise margin is found from the butterfly curve obtained for read, write, and hold modes of operation. © Springer India 2016.