Publication

Abstract : A theoretical model and simulation is presented to express the electron and hole dynamics in InAs/GaAs quantum dots (QDs). For a fixed aspect ratio of 0.3, quantized energy states were computed using eight-band k.p model by varying the QD size and for different operating temperatures. Computational results show alteration in the dynamical behaviour at different temperatures. We obtained longer electron storage capability for 20 nm dot as compared to holes at room temperature operation. However, due to slower tunnelling rate at cryogenic temperatures within 20–50 K, smaller-sized QDs of 12 nm are suitable for memory devices in information storage for greater time span.