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Single-Layer Thin HfO~ 2 Gate Dielectric with n+-Polysilicon Gate

Publisher : SYMPOSIUM ON VLSI TECHNOLOGY

Year : 2000

Abstract : MOSCAPs and MOSFETs of a single-layer thin HfO2 gate dielectric with n+ polysilicon gate were fabricated and characterized. Polysilicon process was optimized such that leakage current and equivalent oxide thickness of HfOz remained low. Excellent C-V properties (e.g. low Dit and frequency dispersion) and reliability characteristics were obtained. Reasonable MOSFET quality was also demonstrated.

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