Publication Type : Other
Source : 2003
Url : http://www.google.com/patents/US6610577
Campus : Amritapuri
School : Centre for Cybersecurity Systems and Networks, School of Engineering
Center : TBI
Department : cyber Security, Chemical
Year : 2003
Abstract : A method for removing polysilicon from isolation regions on a substrate during semiconductor fabrication is disclosed. The method includes depositing a layer of polysilicon over the substrate, and depositing at least one dielectric layer over the polysilicon. The method further includes polishing the polysilicon from the isolation regions, wherein the dielectric layers act as a polishing stop, resulting in regions of polysilicon that are self-aligned to the trench isolation regions.
Cite this Research Publication : J. F. Thomas, Kim, U., and K. Achuthan, “Self-aligned polysilicon polish”. 2003.