Publication

Abstract : In the present work, we propose an optically controlled graphene field effect transistor (OC-GFET) structure where saturation can be attained at lower supply voltage of the order of 1 V. It is compared to present GFET structures using only electrical bias which reaches saturation by using higher supply voltages. The optically induced mobility for the OC-GFET, of the order of 10 5 cm 2 /V -s on h-BN substrate allows it to achieve higher current at the aforesaid bias voltage level. An extrinsic timing analysis is carried out and the OC-GFET is found to have a response time of the order of 10 ps and a bandwidth of the order of 60 GHz.