Publication Type : Journal Article
Publisher : Applied Physics A
Source : Applied Physics A 122, 458 (2016).(IF- 2.584)
Url : https://link.springer.com/article/10.1007/s00339-016-9983-0
Campus : Amritapuri
School : School of Physical Sciences
Department : Physics
Year : 2016
Abstract : Tungsten-doped indium oxide (IWO) thin films were deposited at room temperature using rf-magnetron sputtering. The optical, electrical, and structural properties of the IWO films were studied as functions of the O2-dilution fraction in the Ar sputtering gas. The W-doping level, and contributions of intrinsic oxygen vacancies and W dopant to the free carrier concentration were studied. Windows of optimum deposition conditions are demonstrated where amorphous and smooth-surfaced IWO films are obtained with low resistivity of 3.5 × 10−4 Ω cm, high mobility of 45 cm2 v−1 s−1, and high optical transparency (visible and NIR transparencies of 83 and 80 %, respectively). The observed optoelectronic properties are discussed in light of the underlying electron transport mechanisms.
Cite this Research Publication : I. G. Samatov, B. R. Jeppesen, A. N. Larsen, S. K. Ram, Room-temperature rf-magnetron sputterdeposited W-doped indium oxide: decoupling the influence of W dopant and O vacancies on the filmproperties, Applied Physics A 122, 458 (2016).(IF- 2.584)