Publication

Abstract : A novel Gate All Around Negative Capacitance Junction less FET (GAA-NC-JLFET) is proposed in this work, where different RF/Analog, Linear, and Non-linear parameters were investigated for different ferroelectric thickness in depth. The simulation result is calibrated with the available experimental data from literature. Adding a layer of ferroelectric material to a JLFET is a good means of decreasing short channel effects when compared to typical GAA JLFETs. The effect of ferroelectric layer thickness on DC parameters such as drain current (IDS), subthreshold swing (SS), threshold voltage (Vth), and Ion/Ioff as well as linear parameters such as transconductance coefficients (gm2 and gm3), voltage intercept points (VIP2 and VIP3), and input intercept point (IIP3) have been studied. Furthermore, this paper investigates non-linearity parameters such as harmonic distortion and intermodulation distortion in relation to various ferroelectric thicknesses. The TCAD device simulator was extensively used to conduct this analysis, and the results revealed that increasing the ferroelectric layer resulted in a significant improvement in the values of RF and linear parameters, as well as a decrease in the values of non-linearity parameter values, resulting in an increase in the device's linearity, which can be used in wide range of RFIC applications.