Back close
Admissions

Reliability Characteristics, Including NBTI, of Polysilicon Gate HfO\~ 2 MOSFET’s

Publication Type : Conference Paper

Publisher : INTERNATIONAL ELECTRON DEVICES MEETING,

Source : INTERNATIONAL ELECTRON DEVICES MEETING, 1998.

Campus : Amritapuri

School : School of Engineering

Department : Electronics and Communication

Year : 1998

Abstract :

Cite this Research Publication : K. Onishi, Kang, C. Seok, Choi, R., Cho, H. - J., Dr. Sundararaman Gopalan, Nieh, R., Dharmarajan, E., and Lee, J. C., “Reliability Characteristics, Including NBTI, of Polysilicon Gate HfO\~ 2 MOSFET's”, in INTERNATIONAL ELECTRON DEVICES MEETING, 1998.

Admissions Apply Now