Publication

Abstract : Biosensors are such devices that discover employment in our everyday life in various fields. In this manuscript, we have designed a ferroelectric GaN HEMT biosensor by using the dielectric modulation technique of cavity formation consisting of both ferroelectric layers and biomolecules. Ferroelectric GaN HEMT biosensor is reported for recognization of biomolecules such as protein, streptavidin, chox, and uricase. This work emphasis on the characterization and sensitivity performance of ferroelectric GaN high electron mobility transistor-based biosensor using SILVACO ATLAS software. The immobilization of biomolecules under the gate region results in a large variation of electrostatic properties such as drain current, threshold voltage which can be used as sensing metrics. A significant rise in the drain current with the increasing permittivity value of biomolecule in the nanocavity region. There is a maximum positive shift in threshold voltage that is scrutinized in case of protein as it bears low dielectric constant and also device offers good sensitivity performance.