Publication Type : Journal Article
Publisher : RSC Advances
Source : RSC advances Volume 4 Issue 102 Pages 58372-58376, 2014
Url : https://pubs.rsc.org/en/content/articlelanding/2014/ra/c4ra10933c/unauth
Campus : Coimbatore
School : School of Physical Sciences
Center : Center for Industrial Research and Innovation (ACIRI)
Year : 2014
Abstract : Excitation wavelength dependent femtosecond transient photocurrents were measured on CuIn(S,Se)2 solar cell devices, in the range of 330–1300 nm. Below 450 nm wavelength excitations, charge recombination in CdS/ZnO layers is determined to be responsible for longer decays and lower EQE. Femtosecond pump–probe measurements also support the charge transfer and recombination in CdS/ZnO layers. These measurements will be helpful to design high efficiency CISSe solar cells, by selecting suitable buffer layers.
Cite this Research Publication : Venkatram Nalla, John CW Ho, Sudip K Batabyal, Yue Wang, Alfred IY Tok, Handong Sun, Lydia H Wong, Nikolay Zheludev, "Photophysical investigation of charge recombination in CdS/ZnO layers of CuIn (S, Se) 2 solar cell", RSC advances Volume 4 Issue 102 Pages 58372-58376, 2014