Publication

Abstract :

This manuscript for the first time investigates the effect of Dual Metal on Gate Junctionless Nanosheet FET (DMG-JL-NSFET) for analog/RF applications. The entire analysis is performed for gate length (L_g) = 16 nm at 10μA/μm to focus the weak/moderate inversion region of operation. The results show a whooping amount of reduction in terms of output conductance (g_ds) (∼88.8%) due to the screening effect thereby enhancing the intrinsic gain (A_V) (∼28.97%) of the DMG-JL-NSFET as compared to SMG-JL-NSFET. It is also found that the cut-off frequency (f_T) and maximum oscillation frequency (f_MAX) are increased by an amount of ∼11.82% and ∼2.91% respectively for DMG-JL-NSFET. Furthermore, it is elucidated that increasing the metal gate work function work difference (ΔW = φ_ms-φ_md) reduces the analog/RF performance of the DMG-JL-NSFET. The analysis revealed that increasing the ΔW from 0.3eV to 0.7eV deteriorates A_V, f_T, f_MAX by an amount of ∼17.35%, ∼19.21%, and ∼37.57% respectively. Moreover, the implementation of HfO₂ as high-k gate dielectric as a replacement for SiO₂ degrades the analog/RF efficiency of DMG-JL-NSFET. Moreover, the DMG-JL-NSFET has provided a greater f_T (∼224 GHz)/f_MAX (∼342 GHz) indicating a promising candidature for future beyond 5G (B5G) applications.