Publication

Abstract : This paper provides the extracted values of the parameters affecting the threshold voltage model of SOI MOSFET. The parameter extraction is done for BSIMSOI4.3 MOSFET model. The proposed procedure is designed to give the results based on the device characteristics data. Simulations are performed using the extracted parameters and finally it is compa red for extracted parameters and generic device parameters. The effect of body bias voltage on the threshold voltage is studied by using the extracted val ues. Finally we summarize the work with accurate study of extracted parameters in depicting their effect on the characteristics of device.