Publication Type : Journal Article
Publisher : Chemistry of Materials
Source : Chemistry of Materials, vol. 25, pp. 266-276, 2013
Url : http://dx.doi.org/10.1021/cm301660n
Campus : Amritapuri
School : School of Arts and Sciences
Department : Chemistry
Verified : Yes
Year : 2013
Abstract : A series of diorganotin complexes of dithiocarbamates [Sn(C4H9)2(S2CN(RR′)2)2] (R, R′ = ethyl (1); R = methyl, R′ = butyl (2); R, R′ = butyl (3); R = methyl, R′ = hexyl (4); and [Sn(C6H5)2(S2CN(RR′)2)2] (R, R′ = ethyl (5); R = methyl, R′ = butyl (6); R, R′ = butyl (7); R = methyl, R′ = hexyl (8) were synthesized. Single-crystal X-ray structures of 2, 3, and 8 were determined. Thermogravimetric analysis (TGA) showed single-step decomposition for the complexes 1, 3, and 5–8, and double-step decomposition for the complexes 2 and 4 between 195 °C and 325 °C. Complexes 1–4 were used as single-source precursors for the deposition of SnS thin films by aerosol-assisted chemical vapor deposition (AACVD) at temperatures from 400 °C to 530 °C. Orthorhombic SnS thin films were deposited from all four complexes at all deposition temperatures. The films were characterized by UV–vis spectroscopy, powder X-ray diffraction (p-XRD), Raman spectroscopy, scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDX), and also electrical resistivity measurements.
Cite this Research Publication : Karthik Ramasamy, Vladimir L. Kuznetsov, Dr. Gopal K., Mohammad A. Malik, James Raftery, Peter P. Edwards, and Paul O’Brien, “Organotin Dithiocarbamates: Single-Source Precursors for Tin Sulfide Thin Films by Aerosol-Assisted Chemical Vapor Deposition (AACVD)”, Chemistry of Materials, vol. 25, pp. 266-276, 2013