Publication

Abstract : The top contact organic field effect transistor fabricated using cobalt phthalocyanine as the photoactive layer. Here, the opto-electrical properties of cobalt phthalocyanine based organic field effect transistors were studied with different drain source voltages. The relationship between the organic field effect transistor parameters and the electrical properties of the fabricated devices were explored. We investigated a time-resolved photoensitivity of the fabricated device under dark and illumination. The output characteristics of the fabricated devices with and without irradiation were also studied and show excellent output characteristics with clear saturation and gate dependence. The results demonstrated that at low drain–source voltage under illumination the transfer parameters of the organic field effect transistors are improved. These fabricated organic field effect transistors have excellent electrical characteristics with carrier mobility of 0.45 ± 0.09 cm2/Vs, subthreshold swing of 715.50 ± 72.37 mV/decade and threshold voltage of –4.12 ± 0.05 V under ultraviolet irradiation at drain–source voltage of –2 V. The morphology of the cobalt phthalocyanin thin films reports that the surface has a smooth and uniform structure. The absorbance spectrum of cobalt phthalocyanin films shows maximum absorption in ultraviolet region and makes them more attractive for ultraviolet sensor applications.