Publication Type : Journal Article
Publisher : Optical and Quantum Electronics
Source : Optical and Quantum Electronics, Volume 50, Issue 2, p.76 (2018)
Url : https://doi.org/10.1007/s11082-018-1347-x
Campus : Amritapuri
School : School of Engineering
Department : Electronics and Communication
Year : 2018
Abstract : Embedded Rings (ER) have been fabricated on InGaAsP/InP multi-quantum wells (MQW) using electron beam lithography and methanenbsp;+nbsp;hydrogen reactive ion etching through Cr/SiO2 etched mask. The ER showed a spectrum with interfering resonance modes which has been positively compared with simulation. The device has been used to demonstrate low speed nonlinear tuning of 2nbsp;nm with 10nbsp;mW input optical power.
Cite this Research Publication : Viswas Sadasivan and Utpal Das, “Nonlinear tuning in InGaAsP Embedded Rings”, Optical and Quantum Electronics, vol. 50, no. 2, p. 76, 2018.