Publication

Abstract : Indium oxide thin films at different substrate temperatures (250−450 °C) and nickel doped indium oxide films with various doping concentration of 10 and 15 wt% were coated (at 400 °C) using jet nebulizer spray pyrolysis technique confirmed the cubic phase of the films from X-ray diffraction analysis. The micro-strain effects were also verified by Williamson-Hall method. Field emission scanning electron microscopy (FE-SEM) confirmed temperature dependence in the formation of octahedron layered geometry. The influence of temperature on surface irregularity and its effect on band gap shift confirmed using optical characterization was attributed to Burstein-Moss shift. The influence on doping was reinforced with the emission peak shift of photoluminescence spectra in ultra violet, violet and blue regions (394, 421 and 467 nm). Based on confirmations from these characterizations, n-In2O3/p-Si junction diodes were fabricated for as prepared In2O3 and 10 and 15 wt% concentrations nickel doped In2O3 at 400 °C. P-N junction diodes fabricated and analyzed showed high sensitivity for 15 wt% nickel doped indium oxide under illumination condition. On account of this 15 wt% nickel doped junction diode is a good candidate for optoelectronic devices.