Publication

Abstract : Upconversion in radio frequency magnetron sputtered Er-doped zinc oxide thin films on Si substrate has been demonstrated using 1550 nm cw laser excitation. As-sputtered thin films did not show any upconversion emission, and annealing was required to optically activate the Er3+-ions. Emissions at 985, 809, and 665–675 nm were observed in annealed thin films, corresponding to transitions from 4I11∕2, 4I9∕2, and 4F9∕2 to the ground state 4I15∕2, respectively. The emission from 4I11∕2 was the dominant one, whereas emission from 4I9∕2 was the weakest. The highest intensity at 985 nm was obtained with 2.4 at. % of Er by annealing the film at 700 °C. Annealing at higher temperatures causes Er to diffuse and segregate to the Si-ZnO interface between the Si substrate and the ZnO film.