Publication Type : Conference Proceedings
Source : Global Conference on Recent Advances in Sustainable Materials, GC-RASM, 2021
Campus : Amritapuri
School : School of Arts and Sciences, School of Physical Sciences
Verified : No
Year : 2021
Abstract : Heterojunction c-Si and hydrogenated amorphous silicon (a-Si:H) devices with intrinsic a-Si:H thin layer, known as HIT solar cells, are promising alternatives to conventional c-Si solar cells for the possibility of higher open circuit voltage, low temperature processing and lower costs. We have studied the influence of the properties of p-a-Si:H layer and the work function of the front electrode material on the performance parameters of n-c-Si based HIT solar cells using numerical simulation. The findings are further analyzed using energy band diagrams and carrier concentration profiles at the heterointerface of a-Si:H/n-c-Si to reveal the underlying charge transport mechanisms.
Cite this Research Publication : Nair N., Babu V.T., Udayan A., Parvathy K.S., Arya B.R., Gopika S., Anjitha M., Ram S.K. Influence of the properties of p-a-Si:H layer and the work function of front contact on silicon heterojunction solar cell performance 2021, Materials Today: Proceedings, 49, 1617, 1624 10.1016/j.matpr.2021.07.421, Elsevier Ltd, 2021 Global Conference on Recent Advances in Sustainable Materials, GC-RASM 2021 29 July 2021 through 30 July 2021 22147853