Publication Type : Journal Article
Publisher : Electron Devices, IEEE Transactions on, IEEE,
Source : Electron Devices, IEEE Transactions on, IEEE, Volume 50, Number 2, p.384–390 (2003)
Campus : Amritapuri
School : School of Engineering
Department : Electronics and Communication
Year : 2003
Abstract :
Cite this Research Publication :
K. Onishi, Kang, C. Seok, Choi, R., Cho, H. - J., Dr. Sundararaman Gopalan, Nieh, R. E., Krishnan, S. A., and Lee, J. C., “Improvement of surface carrier mobility of HfO 2 MOSFETs by high-temperature forming gas annealing”, Electron Devices, IEEE Transactions on, vol. 50, pp. 384–390, 2003.