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Hard mask removal process including isolation dielectric refill

Publication Type : Patents

Authors : Prof. Krishnashree Achuthan, U. Kim, Hopper, D. M., Wu, Y.

Source : (2003)

Url : http://www.google.com/patents/US6607925(link is external)

Campus : Amritapuri

School : Centre for Cybersecurity Systems and Networks, School of Engineering

Center : Cyber Security, TBI

Department : cyber Security

Year : 2003

Abstract : A method for repairing an isolation dielectric damaged during a semiconductor fabrication process is disclosed in which a hard mask material is used to pattern a first material, the first material having openings therein exposing isolation regions comprising a first isolation dielectric layer. The method includes etching the hard mask material from the first material, wherein the etch creates gouges in the first isolation dielectric layer, and depositing a second layer of isolation dielectric over the first material, wherein the second isolation dielectric layer fills the gouges in the first isolation dielectric layer. The method further includes polishing on the second layer of isolation dielectric to remove the second layer of isolation dielectric from the first material.

Cite this Research Publication : U. Kim, Hopper, D. M., Wu, Y., and Dr. Krishnashree Achuthan, “Hard mask removal process including isolation dielectric refill”, 2003

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