Publication Type : Book Chapter
Publisher : Springer
Source : Springer International Publishing AG (2014) (2nd Edition in 2017)
Url : https://link.springer.com/referenceworkentry/10.1007/978-3-319-05744-6_28
Campus : Amritapuri
School : School of Physical Sciences
Department : Physics
Year : 2017
Abstract : The future development of porous silicon (PS)-based optoelectronic devices depends on a proper understanding of electrical transport properties of the PS material. Electrical transport in PS is influenced not only by each step of processing and fabrication methods but also by the properties of the initial base substrate. This chapter endeavors to chronologically document how the knowledge base on the nature of carrier transport in PS and the factors governing the electrical properties has evolved over the past years. The topics covered include the proposed electrical transport models including those based on effective medium theories, studies on contacts, studies on physical factors influencing electrical transport, anisotropy in electrical transport, and attempts to classify the PS material.
Cite this Research Publication : S. K. Ram, Electrical Transport in Porous Silicon, Handbook of Porous Silicon, Edited by Leigh T. Canham,Springer International Publishing AG (2014) (2nd Edition in 2017)