Publication Type : Journal Article
Publisher : Electron Device Letters, IEEE
Source : Electron Device Letters, IEEE, IEEE, Volume 21, Number 4, p.181–183 (2000)
Campus : Amritapuri
School : School of Engineering
Department : Electronics and Communication
Year : 2000
Abstract :
Cite this Research Publication :
L. Kang, Lee, B. Hun, Qi, W. - J., Jeon, Y., Nieh, R., Dr. Sundararaman Gopalan, Onishi, K., and Lee, J. C., “Electrical characteristics of highly reliable ultrathin hafnium oxide gate dielectric”, Electron Device Letters, IEEE, vol. 21, pp. 181–183, 2000