Publication

Abstract : In this chapter, the impact of dielectric materials near the source region on DC performance such as transfer characteristic, threshold voltage (V T), I ON/I OFF ratio, and I ON/I AMB ratio are investigated in hetero-gate dielectric TFET (HG-TFET) through a TCAD simulator. The various dielectric materials considered during simulation are Al2O3, HfO2, and La2O3. Furthermore, the influence of these dielectric materials on the hot carrier effect (HCE) is studied for HG-TFET by plotting the horizontal electric field and the impact ionization rate. Furthermore, the effect of drain to source bias (V DS) on DC and HCE is highlighted in HG-TFET. Finally, we have shown the DC and HCE in HG-TFET taking length of high-k dielectric material (L h-k) as a material. Results reveal that the ON current of the device is improved, whereas subthreshold behavior degrades, as dielectric material near the source is changed from SiO2 to La2O3. It is perceived that HCE is degraded due to increase in horizontal field and rate of impact ionization, when La2O3 is considered as dielectric material near the source region. The increase in V DS increased the ON current, while it degrades the ambipolar current of HG-TFET. Results summarized that the increased in V DS degrades the HCEs in HG-TFET. It is perceived that highest value of ON to ambipolar current at L h-k = 10 nm, whereas HCE degrades at L h-k = 15 nm.