Publication

Abstract : Scaling of MOSFET increases the device performance in terms of speed, current drive, operating frequency and many other parameters; but on the other end, noise aggravates due to shrinking of device dimensions. Although several noise sources are present in recent submicron device, the equivalent thermal noise is considered as a prominent one. This paper deals with analysis and computation of various available thermal noise models and also focuses on the design and implementation of MOS-based all-pass filter using the appropriate thermal noise model. Thus the drawbacks of the currently available MOSFET models which do not include the equivalent noise model, have been considerably overcome. Simulation results of MOS based all pass filter with and without the inclusion of equivalent thermal noise model have been discussed and hence the accuracy of the design is improved.