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Characteristics of TaN gate MOSFET with ultrathin hafnium oxide (8/spl Aring/-12/spl Aring/)

Publication Type : Conference Paper

Publisher : Electron Devices Meeting, 2000. IEDM'00. Technical Digest. International, IEEE

Authors : Dr. Sundararaman Gopalan, Lee, Byoung Hun; Choi, Rino; Kang, Laegu;Nieh, Renee; Onishi, Katsunori; Jeon, Y; Qi, Wen-Jie; Kang, C; Lee, JC

Source : Electron Devices Meeting, 2000. IEDM'00. Technical Digest. International, IEEE (2000)

Campus : Amritapuri

School : School of Engineering

Department : Electronics and Communication

Year : 2000

Abstract :

Cite this Research Publication : B. Hun Lee, Choi, R., Kang, L., Dr. Sundararaman Gopalan, Nieh, R., Onishi, K., Jeon, Y., Qi, W. - J., Kang, C., and Lee, J. C., “Characteristics of TaN gate MOSFET with ultrathin hafnium oxide (8/spl Aring/-12/spl Aring/)”, in Electron Devices Meeting, 2000. IEDM'00. Technical Digest. International, 2000.


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