Publications

Abstract :

This manuscript for the first time presents the digital and analog/RF performance analysis for novel Tree-shaped Junctionless Nanosheet (NS) FET. An additional inter-bridge (IB) channel is added to the vertically stacked JL-NSFET to form a Tree-shaped structure. The Tree-shaped JL-NSFET is compared with the conventional JL-NSFET for ${L}_{g}$ = 16 nm, ${T}_{\text {NS}}$ = 5 nm, ${W}_{\text {NS}}$ = 18 nm, ${W}_{\text {IB}}$ = 2 nm, and ${H}_{\text {IB}}$ = 6 nm. It is observed that ON-current ( ${I}_{ \mathrm{\scriptscriptstyle ON}}$ ) has been improved for Tree-shaped JL-NSFET by an amount of ~15.3% with a decent subthreshold swing of 61.5 mV/dec. The analog/RF performance of the Tree-shaped JL-NSFET has been improved satisfactorily as compared to the conventional JL-NSFET. Further to enhance the digital/analog RF performance the ${W}_{\text {IB}}$ is varied between 2–4 nm. The ${I}_{ \mathrm{\scriptscriptstyle ON}}$ is increased by an amount of ~23.56% with the increase in ${W}_{\text {IB}}$ due to the increase in effective width. However, the same resulted in the degradation of ${A}_{V}$ , GFP, ${f}_{T}$ , and ${f}_{\text {MAX}}$ by an amount of ~1.72%, ~3.39%, ~4.46%, and ~8.39%, respectively, at 1-nA normalized drain current. Hence lower ${W}_{\text {IB}}$ must be chosen for the improvement of analog/RF parameters. Furthermore, the effect of temperature (100–400 K) on Tree-shaped JL-NSFET is also investigated and the performance is best recorded at lower temperatures. At 1-nA normalized drain current, ${g}_{m}$ , ${A}_{V}$ , ${f}_{T}$ , ${f}_{\text {MAX}}$ , and GFP are noticeably improved by an amount of ~68.6%, ~5.84%, ~65.02%, ~34.14%, and ~56.02%, respectively. Moreover, the effect of IB height ( ${H}_{\text {IB}}$ ) is explored (6–14 nm) and it is inferred that ${H}_{\text {IB}}$ should be optimized to get better digital and analog/RF performances according to the application areas.