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Dr. Laxman Raju Thoutam

Assistant Professor, Amrita School for Nanosciences and Molecular Medicine, Kochi campus

Bio Publications
Bio

Dr. Laxman Raju Thoutam is an Assistant Professor in nanoelectronics group at Amrita School for Nanosciences and Molecular Medicine, Amrita Vishwa Vidyapeetham, Kochi campus. Dr. Thoutam did his postdoctoral research on the synthesis and characterization of high-quality wide band-gap complex oxide thin films and heterostructures at University of Minnesota, USA. He received his Ph.D. in Nanoscience (2016) and Master of Science in Nanotechnology (2011) from Northern Illinois University, DeKalb, Illinois. USA. His Ph.D. dissertation work revealed intriguing three-dimensional electronic transport and temperature-dependent magnetoresistance anisotropy in a two-dimensional layered material WTe2, (the experimental findings were highlighted and as featured as a viewpoint article in physics(2015)).He has more than 11 years of cleanroom fab experience in design, development and testing of micro/nanoscale functional devices while working at Microelectronics Research and Development Laboratory (Northern Illinois University), Centre for Nanoscale Materials (Argonne National Laboratory) and Minnesota Nano Centre (University of Minnesota). He is interested to explore structure-property relationships in wide band-gap oxide semiconductors, two-dimensional materials, and perovskite-based material systems to design and develop functional device applications. He focuses primarily to investigate fundamental electronic properties of different material systems; and tailor new electronic properties into conventional materials using interface effect, proximity effect, and electrostatic field-effect approaches.Dr. Thoutam is currently focused on understanding and evaluating the doping efficiencies of ultra-wide bandgap semiconductor oxide materials to cater nanoscale optical and high-power device applications. He is also interested in the synthesis and characterization of tin-halide based perovskite systems; tune the interface band-alignment levels of the absorber/charge transport layers (by doping & material engineering) to decrease the interface defect densityto yield high solar-cell efficiencies.

Publications

Book Chapter

Year : 2023

Energy Harvesting and Storage Devices: Sustainable Materials and Methods

Cite this Research Publication : Thoutam, L.R., Ajayan, J., Nirmal, D. Energy harvesting and storage devices: Sustainable materials and methods (2023) Energy Harvesting and Storage Devices: Sustainable Materials and Methods, pp. 1–310.

Publisher : CRC Press

Year : 2023

Piezoelectric Materials for Energy Harvesting Applications

Cite this Research Publication : 5. Thoutam, L.R., Pulla, S. Piezoelectric materials for energy harvesting applications (2023) Energy Harvesting and Storage Devices: Sustainable Materials and Methods, pp. 1–24.

Publisher : CRC Press

Journal

Year : 2023

Organic electrochemical transistors (OECTs): advancements and exciting prospects for future biosensing applications

Cite this Research Publication : Ajayan, J., Mohankumar, P., Mathew, R., Thoutam, L. R., Kaushik, B.K., Nirmal, D. Organic Electrochemical Transistors (OECTs): Advancements and Exciting Prospects for Future Biosensing Applications (2023) IEEE Transactions on Electron Devices, 70, 3401-3412.

Publisher : IEEE

Year : 2023

A critical review of fabrication challenges and reliability issues in top/bottom gated MoS2 field-effect transistors

Cite this Research Publication : Thoutam, L.R., Mathew, R, Ajayan, J., Tayal, S., Nair, S.V. A critical review of fabrication challenges and reliability issues in top/bottom gated MoS2 field-effect transistors (2023) Nanotechnology, 34, 232001.

Publisher : IOP Publishing

Year : 2023

Performance analysis of metal gate engineered junctionless nanosheet fet with a ft/fmax of 224/342ghz for beyond 5g (b5g) applications

Cite this Research Publication : https://www.sciencedirect.com/science/article/pii/S2773012323000791?casa_token=V8nTB1_eAXwAAAAA:bs6_u69H4KGiwDrzlGRkNm-KauJcGPdzSZM012zeliZVbJx1YsPtm0YlvXiqOZXAfHeJ-N5-BOM

Publisher : Elsevier

Year : 2023

Introduction to Nanoscale Interconnect Materials

Cite this Research Publication : Thoutam, L.R., Nair, S. Introduction to Nanoscale Interconnect Materials (2023) Nano-Interconnect Materials and Models for Next Generation Integrated Circuit Design, pp. 34–59.

Publisher : CRC Press

Year : 2023

Investigation of Thermal Performance on Conventional and Junctionless Nanosheet Field Effect Transistors

Cite this Research Publication : 3. Valasa, S., Tayal, S., Thoutam, L.R. Investigation of Thermal Performance on Conventional and Junctionless Nanosheet Field Effect Transistors (2023) Advanced Ultra Low-Power Semiconductor Devices: Design and Applications, pp. 187–205

Year : 2023

Effect of Pt vacancies on magnetotransport of Weyl semimetal candidate GdPtSb epitaxial films

Cite this Research Publication : Du, D., Thoutam, L.R., Genser, K.T., Zhang, C., Rabe, K. M., Samanta, T., Jung, T., Jalan, B., Voyles, P.M., Kawasaki, J.K. Effect of Pt vacancies on magnetotransport of Weyl semimetal candidate GdPtSb epitaxial films (2023) Physical Review Materials, 7, 084204.

Publisher : APS

Year : 2022

An intensive study of tree-shaped JL-NSFET: digital and analog/RF perspective

Cite this Research Publication : Valasa, S., Tayal, S., Thoutam, L.R. An Intensive Study of Tree-Shaped JL-NSFET: Digital and Analog/RF Perspective (2022) IEEE Transactions on Electron Devices, 69, 6561-6568.

Publisher : IEEE

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