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Anjana J. G.

Assistant Professor, Department of Electronics and Communication Engineering , School of Engineering, Amritapuri.

Qualification: M.Tech.
anjanajg@am.amrita.edu
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Research Interest: Thin Film Transistors, Semiconductor Sensors, Flexible Electronics
Date of Joining: 25/05/2023
Nature of Association: Regular

Bio

Anjana J G is currently an Assistant Professor with the Department of Electronics and Communication Engineering at Amrita School of Engineering, Amritapuri. She is doing PhD at NIT Calicut. She has completed an M. Tech. in VLSI Design from Calicut University and B.Tech from University of Kerala. Her area of interest include VLSI, Fabrication, TCAD modeling, Thin Film Transistors and circuit design.

Publications

Journal Article

Year : 2022

Surface potential based modeling of zinc oxynitride thin film transistors

Cite this Research Publication : Anjana, J.G., Anand, V. and Nair, A.R., 2022. Surface potential based modeling of zinc oxynitride thin film transistors. Flexible and Printed Electronics, 7(3), p.035004

Publisher : Flexible and Printed Electronics

Conference Paper

Year : 2022

A Photo Conductivity simulation of ZnON TFT using ATLAS TCAD

Cite this Research Publication : Anjana, J.G., Nair, A.R. and Anand, V., 2022, August. A Photo Conductivity simulation of ZnON TFT using ATLAS TCAD. In 2022 Third International Conference on Intelligent Computing Instrumentation and Control Technologies (ICICICT) (pp. 1060-1064). IEEE

Publisher : IEEE

Year : 2022

A Study on Deposition Rate and Thickness for ZnON Thin Films

Cite this Research Publication : Anjana, J.G. and Anand, V., 2022, September. A Study on Deposition Rate and Thickness for ZnON Thin Films. In 2022 4th International Conference on Inventive Research in Computing Applications (ICIRCA) (pp. 207-210). IEEE

Publisher : IEEE

Year : 2020

Two dimensional numerical simulation of zinc oxy-nitride thin film transistors

Cite this Research Publication : Anjana, J.G. and Anand, V., 2020, July. Two dimensional numerical simulation of zinc oxy-nitride thin film transistors. In 2020 International Conference on Electronics and Sustainable Communication Systems (ICESC) (pp. 1052-1055). IEEE.

Publisher : IEEE

Year : 2014

A three level cache structure

Cite this Research Publication : Anjana, J.G. and Prasanth, M., 2014, May. A three level cache structure. In 2014 IEEE International Conference on Advanced Communications, Control and Computing Technologies (pp. 426-430). IEEE

Publisher : IEEE

FDP / Workshops
  1. Virtual Faculty Workshop_VLSI to System design : Silicon to end application approach(31-07-2023 to 4-08-2023)
  2. “SDMS 23Five-Day Short Term Training Program on Next Generation Semiconductor Devices,Memories and Sensors (SDMS 23)” 24-07-2023 to 28-07-2023
  3. “Advances in Materials and Characterization Techniques-AMCT-2020 02/11/2020 to 06/11/2020
  4. “Advanced Micro/Nano Sensor Technologies: Modeling, Simulation andFabrication (AMNST 2021)” 5-9 July 2021
  5. “Modeling, Simulation and Fabrication of Future Nano-electronic Devices andSensors (MSFNS’20)”
  6. Basic Training Program in Nano Science and Technology (20 – 22 January 2020)
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