| Course Name | Microwave Solid State Devices |
| Course Code | 15ECE349 |
| Program | B. Tech. in Electronics and Communication Engineering |
| Year Taught | 2019 |
Introduction to radio frequency transistors and diodes: Transit time effects – Silicon and GaAs material properties – Applications. Bipolar Transistors (BJT): Physical structure – Configuration – Operation – Amplification phenomena. Hetero junction BJT: Operational mechanism – Applications: Tunnel effect: Tunnel diodes and operation.
Field effect transistors (FET): Junction FET: Structure – Operation – I-V characteristics. Metal Semiconductor FET (MESFET): Structure – Operation – Cutoff and maximum oscillation Frequency. High electron mobility Transistors (HEMT): Structure – Operation and electronic applications. Metal oxide semiconductor FET: Maximum operation frequency – CMOS, NMOS Memory devices.
Transferred electron devices: Gunn effect – GaAs diode – Ridley’s Watkins Hilsum Theory – Negative resistance – Two valley model theory – High field domain – Modes of operation – Classification of modes – Limited space charge accumulation – LSA diodes – InP diodes. Avalanche transit time devices: Read diodes – IMPATT – TRAPATT – BARITT – Parametric devices. Monolithic microwave integrated circuits: Materials – Substrate: conductor, Dielectric – Resistive materials – MMIC fabrication techniques – MOSFET fabrication – Thin film formation – Hybrid integrated circuit fabrication.
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