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Course Detail

Course Name Electronic Devices and Circuits
Course Code 19ECE112
Program B. Tech. in Electronics and Communication Engineering, B. Tech. in Computer and Communication Engineering, B. Tech. in Electrical and Computer Engineering
Semester Two
Year Taught 2019

Syllabus

Contents

Review of Network and Semiconductor Basics – PN Junction Diodes – Forward and Reverse Biasing – Reverse Saturation Current – Diode current components – Cut-in voltage – VI Characteristics. Diode Parameters – Data sheets – Diode Models. Rectification – Half-wave – Full-wave and Bridge – Filters. Zener Diodes -Shunt voltage regulator – Regulator Design – Case Study. Varactor Diodes – Schottky Diodes – Tunnel Diodes and LEDs.

Transistors – BJTs – PNP and NPN transistors – Effects – Transistor Currents – Amplifying action of a transistor. Transistor Characteristics – CE configuration – Biasing – Quiescent point – Load line – Biasing – Fixed base bias – Small Signal Model of BJT.

Field Effect Transistors – MOSFET – Enhancement and Depletion Modes – Regions of Operation. MOSFET Characteristics – MOSFET Amplifier – MOSFET as a switch.

Text Books

  1. Adel S Sedra, Kenneth C Smith and Arun N Chandorkar, “Microelectronic Circuits – Theory and Applications”, Seventh Edition, Oxford University Press, 2017.
  2. Robert L Boylestad and Louis Nashelsky, “Electronic Devices and Circuit Theory”, Eleventh Edition, Pearson India Education Services Pv Ltd., 2015.
  3. Donald A Neamen, “Electronic Circuits – Analysis and Design”, Third Edition, McGraw Hill Education, 2006.
  4. Albert Malvino and David Bates, Electronic Principles, Eighth Edition, McGraw Hill Education, 2016.

Resources

Objectives and Outcomes

Objectives

  • To introduce basic semiconductor devices, their characteristics and application
  • To understand analysis and design of simple diode circu
  • To learn to analyze the PN junction behavior at the circuit level and its role in the operation of diodes and active device

Keywords:

Passive components, Diodes, BJTs and MOSFETs.

Course Outcomes

  • CO 1: Ability to analyze PN junctions in semiconductor devices under various conditions.
  • CO 2: Ability to design and analyze simple rectifiers and voltage regulators using diodes.
  • CO 3: Ability to describe the behavior of special purpose diodes.
  • CO 4: Ability to design and analyze simple BJT and MOSFET circuits.

CO – PO Mapping

CO/ PO PO1 PO2 PO3 PO4 PO5 PO6 PO7 PO8 PO9 PO10 PO1 1 PO1 2 PSO1 PSO2
CO1 3 2
CO2 3 3 2 2
CO3 3 2
CO4 3 3 2 2

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