Publication Type : Conference Proceedings
Publisher : The Physics of Semiconductor Devices, Proceedings of International Workshop on the Physics of Semiconductor and Devices
Source : The Physics of Semiconductor Devices, Proceedings of International Workshop on the Physics of Semiconductor and Devices, Springer International Publishing, Cham, p.263-267 (2019)
Url : https://link.springer.com/chapter/10.1007%2F978-3-319-97604-4_40
ISBN : 9783319976044
Campus : Amritapuri
School : School of Engineering
Department : Electronics and Communication
Year : 2019
Abstract : A regrowth-free direct epitaxial lateral overgrowth method for MOCVD GaN on Sapphire is demonstrated here. The mask used is 2 μm thick SiO2 stripes with 5 μm separation and 19 μm period, formed on c-plane sapphire substrate. An uninterrupted two step growth process has been developed to obtain appropriate growth rates in vertical and horizontal directions. Coalescence has been achieved when the stripes were aligned perpendicular to the primary cut. The AFM image revealed textasciitilde1.4° surface tilt in the regrown regions. Photoluminescence study showed uniformity in the central region of the wafer and slight broadening of the spectrum, possibly due to defects in the coalescence region.
Cite this Research Publication : Viswas Sadasivan and Mathew, M., “Direct Epitaxial Lateral Overgrowth of GaN on Sapphire”, The Physics of Semiconductor Devices, Proceedings of International Workshop on the Physics of Semiconductor and Devices. Springer International Publishing, Cham, pp. 263-267, 2019