Publication Type : Journal Article
Thematic Areas : Nanosciences and Molecular Medicine
Publisher : New Journal of Chemistry.
Source : New Journal of Chemistry, Volume 40, p.6228-6237 (2016)
Url : http://pubs.rsc.org/-/content/articlelanding/2016/nj/c6nj01133k/unauth#!divAbstract
Campus : Amritapuri
School : School of Arts and Sciences
Center : Amrita Center for Nanosciences and Molecular Medicine Move, Nanosciences
Department : Physics
Verified : Yes
Year : 2016
Abstract : The prevention of back electron transfer by inserting an energy barrier layer at the interface of a photo-anode is an effective method for improving the photovoltaic parameters in dye sensitised solar cells (DSSCs). In this study, phase a modified Nb2O5 blocking layer was inserted at the fluorine doped tin oxide (FTO)/TiO2 interface via a Rf magnetron sputtering process. For a critical tunnelling distance of ∼40 nm, the crystalline Nb2O5 blocking layer improved the efficiency close to 7% and outperformed the amorphous blocking layer by about 68%. The longer electron lifetime observed in DSSCs containing an inhomogeneous Nb2O5 layer indicates that trapping/de-trapping impedes the discharge of electrons to the TiO2 band edge. The origin of the longer electron lifetime is explained by formulating a theory from photovoltage decay measurements.
Cite this Research Publication : S. Suresh, Deepak, T. Gangadhara, Ni, C., Dr. Sreekala C. O., Satyanarayana, M., A. Nair, S., and Pillai, V. Pappukkuty, “The Role Of Crystallinity Of The Nb2O5 Blocking Layer On The Performance Of Dye-Sensitized Solar”, New Journal of Chemistry, vol. 40, 7 vol., pp. 6228-6237, 2016.