Publication Type : Journal Article
Publisher : Chemistry of Materials
Source : Chemistry of materials Volume 19 Issue 15 Pages 3662-3666, 2007
Url : https://pubs.acs.org/doi/abs/10.1021/cm070258p
Campus : Coimbatore
School : School of Physical Sciences
Center : Center for Industrial Research and Innovation (ACIRI)
Year : 2007
Abstract : We form pn-junctions by electrostatic binding of a p-type and an n-type ZnO nanoparticle. Current−voltage characteristics of pn-junctions are rectifying in nature. Individual components of the junction do not show any rectification. An np-junction, formed by reversing the binding sequence of the two types of nanoparticles, shows rectification in the reverse bias direction. By controlling the type of dopants in the ZnO nanoparticles, pn+ (and n+p) and nn+ (and n+n) junctions are formed that exhibit rectification. Current rectification in a junction between two nanoparticles shows that a depletion layer may have formed even in the quantum dot regime.
Cite this Research Publication : Kallol Mohanta, Sudip K Batabyal, Amlan J Pal, "pn-junction rectifiers based on p-ZnO and n-ZnO nanoparticles", Chemistry of materials Volume 19 Issue 15 Pages 3662-3666, 2007