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Electrical Characterization and Reliability Analysis of HfO2-TiO2-Al MOSCAPs

Publication Type : Journal Article

Source : World Academy of Science, Engineering and Technology

Campus : Amritapuri

School : School of Engineering

Department : Electronics and Communication

Year : 2009

Abstract : MOSCAPs of various combinations of Hafnium oxide and Titanium oxide of varying thickness with Aluminum as gate electrode have been fabricated and electrically characterized. The effects of voltage stress on the I-V characteristics for prolonged time durations have been studied and compared. Results showed hard breakdown and negligible degradation of reliability under stress.

Cite this Research Publication : Shibesh Dutta, Sivaramakrishnan R, Dr. Sundararaman Gopalan, Balakrishnan Shankar, " Electrical Characterization and Reliability Analysis of HfO2-TiO2-Al MOSCAPs ", World Academy of Science, Engineering and Technology.

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