Publication Type : Journal Article
Source : World Academy of Science, Engineering and Technology
Campus : Amritapuri
School : School of Engineering
Department : Electronics and Communication
Year : 2009
Abstract : MOSCAPs of various combinations of Hafnium oxide and Titanium oxide of varying thickness with Aluminum as gate electrode have been fabricated and electrically characterized. The effects of voltage stress on the I-V characteristics for prolonged time durations have been studied and compared. Results showed hard breakdown and negligible degradation of reliability under stress.
Cite this Research Publication : Shibesh Dutta, Sivaramakrishnan R, Dr. Sundararaman Gopalan, Balakrishnan Shankar, " Electrical Characterization and Reliability Analysis of HfO2-TiO2-Al MOSCAPs ", World Academy of Science, Engineering and Technology.