Publication

Abstract : A scaled down graphene field effect transistor (GFET) has been modeled by incorporating the quantum capacitance effects. The proposed GFET model scaled down to 90nm has been developed using compact model equations.Metal oxide gated compact GFET models have been modeled without considering variation of top gate capacitance withquantum capacitance effects. But the effects of deviation of quantum capacitance become more with scaling down and cannot be neglected. In this paper the compact drain current equation has been derived by incorporating the dependence of quantum capacitance on the channel voltage and on intrinsic parameters of the device has been considered. The parameters of interest for circuit design have been determined from current characteristics, transfer characteristics, trans-conductance, and transit frequency. As the measure of performance of the model library in a circuit is often defined as unit gate delay, we propose to determine the rise time and fall time of a single GFET inverter and present the results.