Publication

Abstract : : One of the “fundamental” problems in the continued scaling of MOSFETs is the 60 mV/decade room temperature limit in sub-threshold slope. Therefore initial studies on a new kind of transistor, the I-MOS. is done. The I - MOS uses modulation of the breakdown voltage of a gated p - i - n structure in order to switch from the OFF to the ON state and vice versa. Since impact-ionization is an abrupt function of the electric field (or the carrier energy), simulations show that the device has a sub-threshold slope much lower than the above mentioned. This TCAD Sentaurus project simulates the electrical characteristics of an n-channel impact ionization metal–oxide–semiconductor (n-IMOS) transistor. The Id–Vg characteristics of a two dimensional (2D) n-IMOS structure are simulated. The Id–Vg characteristics are simulated for drain biases of 0 V and 1.1 V. In addition, various electrical parameters such as the breakdown voltage, the threshold voltage, the subthreshold slope, and the on-current and off-current are extracted