Publication Type : Patents
Source : Number US 10/262,992, USA (2004)
Url : https://www.google.com/patents/US6720259
Campus : Coimbatore
School : School of Engineering
Department : Chemical
Year : 2004
Abstract : A method to deposit a passivating layer of a first material on an interior reactor surface of a cold or warm wall reactor, in which the first material is non-reactive with one or more precursor used to form a second materials. Subsequently when a film layer is deposited on a substrate by subjecting the substrate to the one or more precursors, in which at least one precursor has a low vapor pressure, uniformity and repeatability is improved by the passivation layer.
Cite this Research Publication : A. R. Londergan, Dr. Sasangan Ramanathan, Winkler, J., and Seidel, T. E., “Passivation Method for Improved Uniformity and Repeatability for Atomic Layer Deposition and Chemical Vapor Deposition”, U.S. Patent US 10/262,9922004.
