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Room Temperature Ferromagnetism and Band Gap Engineering in Mg Doped ZnO RF/DC Sputtered Films

Publication Type : Conference Proceedings

Source : Materials Research Society Symposium Proceedings, 2013

Url : https://link.springer.com/article/10.1557/opl.2013.509

Campus : Amritapuri

School : School of Arts and Sciences, School of Physical Sciences

Year : 2013

Abstract : Mg doped ZnO thin films were prepared by DC/RF magnetron co-sputtering in (Ar+O2) ambient conditions using metallic Mg and Zn targets. We present a comprehensive study of the effects of film thickness on the structural, optical and magnetic properties. Room temperature ferromagnetism was observed in the films and the saturation magnetization (MS) increases at first as the film’s thickness increases and then decreases. The MS value as high as ∼15.76 emu/cm3 was achieved for the Mg-doped ZnO film of thickness 120 nm. The optical band gap of the films determined to be in the range 3.42 to 3.52 eV.

Cite this Research Publication : Mahadeva S.K., Quan Z.-Y., Fan J.-C., Albargi H.B., Gehring G.A., Riazanova A.V., Belova L.M., Rao K.V. Room temperature ferromagnetism and band gap engineering in Mg doped ZnO RF/DC sputtered films 2013. Materials Research Society Symposium Proceedings 1577 1 6 10.1557/opl.2013.509 Materials Research Society 2013 MRS Spring Meeting 1 April 2013 through 5 April 2013 2729172 - 2.7

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