Publication

Abstract : This paper presents the design and analysis of linearity improved low noise amplifier (LNA) for X-band applications such as wireless, satellite, and radar communication. In such applications for efficient communication, the LNA should have good linearity in order to handle strong interferers at wideband receiver operation. Hence, achieving better linearity is inevitable for high frequency applications, but it has a trade-off between circuit power, noise, and bandwidth. For linearity improvement of this high frequency band applications, a low power, low noise, modified Common Gate-Common Source LNA with cross-coupled LC circuit in cascode stage is proposed in this work. The LNA is designed and implemented in UMC 180 nm complementary metal–oxide–semiconductor process technology. From the post-layout simulations, the observed third-order input intercept point is 13.09 dBm at the center frequency of 10 GHz. The proposed LNA provides a maximum gain of 18.07 dB and a minimum Noise Figure of 2.88 dB with 5.3 mW power consumption at a supply of 1.2 V.