Publication Type : Conference Proceedings
Source : 2nd International Conference on Advances in Physical Sciences and Materials 2021, ICAPSM 2021
Campus : Amritapuri
School : School of Arts and Sciences, School of Physical Sciences
Department : Physics
Year : 2021
Abstract : Indium–tin–oxide (ITO) is a material having metallic behavior in the infra-red spectral range. Its electrical and optical properties are also easily tuned, making it a suitable alternative plasmonic material in the infra-red region. In this work, electrical and optical simulation modeling was performed to study the effect of trap densities in different carrier scattering mechanisms on the mobility in ITO. This study correlates the micro-structural and opto-electronic parameters to the surface plasmon resonance (SPR) behavior in the ITO thin films. The results indicate that low defect density with high carrier concentration can provide better SPR performance in ITO.
Cite this Research Publication : Arya K., Anjitha M., Sharika E., Nair N., Meenu M., Sanjeev P., Babu V.T., Ram S.K. Influence of trap densities in ITO thin film on the optical, electrical, and surface plasmon resonance properties, 2021 Journal of Physics: Conference Series, 2070, 110.1088/1742-6596/2070/1/012020, IOP Publishing Ltd, 2nd International Conference on Advances in Physical Sciences and Materials 2021, ICAPSM 2021, 12 August 2021 through 13 August 2021, 17426588