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Variable Gain Wide Band LNA in 0.13 µm Si Ge HBT with Stepped Impedance Microstrip Open Circuited Stubs for Minimum Transmission Phase Variation for WiGig Phased Array Receivers

Publication Type : Journal Article

Publisher : Springer

Source : Springer, Journal of Computational Electronics

Url : https://www.researchgate.net/publication/362299753_Variable_gain_wideband_LNA_in_130_nm_SiGe_HBT_technology_with_stepped_impedance_micro-strip_open_circuited_stubs_for_minimum_transmission_phase_variation_for_WiGig_phased_array_receivers

Campus : Chennai

School : School of Engineering

Department : Electronics and Communication

Year : 2022

Abstract : This paper presents a 130nm SiGe HBT process variable gain low noise amplifier (VGLNA) with low phase variation that can be used in phased array systems. The transmission phase variations in the proposed VGLNA are compensated by optimizing the passive micro-strip components in the current steering control circuit. Phase variation of less than 3∘\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$3^{\circ }$$\end{document} with a Gain Control Range (GCR) of 24.1 dB was observed, which is 6 times better than the conventional cascade topology. A 3 dB bandwidth of 16.42 GHz is achieved with a peak gain of 20.4 dB. A Noise Figure (NF) of less than 5.3 dB and IIP3 of − 1 dBm is observed in the frequency range of 57 to 6 4 GHz. Layout of the proposed circuit occupies a chip area of 205 × 200 µm² making it compatible for phased array wireless network systems.

Cite this Research Publication : Pournamy S, Maran Ponnambalam ,”Variable Gain Wide Band LNA in 0.13 µm Si Ge HBT with Stepped Impedance Microstrip Open Circuited Stubs for Minimum Transmission Phase Variation for WiGig Phased Array Receivers”. Springer, Journal of Computational Electronics

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