Publication

Abstract : In this paper, a Ge-source is employed in split drain Z-shaped line TFET structure (SD-ZHP-TFET) and named as Ge-source SD-ZHP-TFET. The presence of split drain increases the tunnel width at interface of channel-drain, which reduces the ambipolar current (I AMB ). Also, the horizontal pocket at source region and the Ge-source boost the ON current (I ON ) of the SD-ZHP-TFET. A comparative study in terms of transfer characteristic and current ratio (I ON /I OFF and I ON /I AMB ) among ZHP, SD-ZHP, and Ge-source SD-ZHP TFETs are highlighted through TCAD simulator. Furthermore, the impact of drain doping concentration of region 1 (N du ) and region 2 (N dl ) on transfer characteristic, I OFF , and I AMB are studied in proposed TFET. The Ge-source SD-ZHP-TFET provides I ON /I OFF and I ON /I AMB in the order of 10 9 and 10 11 , respectively. Finally, RF/analog parameters like transconductance (g m ) and cut off frequency (f c ) is evaluated for Ge-source SD-ZHP-TFET.