Publication Type : Conference Proceedings
Publisher : Springer
Source : Micro and Nanoelectronics Devices, Circuits and Systems. Lecture Notes in Electrical Engineering
Url : https://link.springer.com/chapter/10.1007/978-981-19-2308-1_27
Campus : Amaravati
School : School of Engineering
Year : 2023
Abstract : In this paper, zinc sulfide (ZnS) is taken as a suitable buffer layer in the copper zinc tin sulfide (CZTS) solar cell. The solar cell parameters have been calculated by considering the thickness and the bandgap of the ZnS layer using SCAPS 1D software. This proposed device model witnessed a good performance in all the parameters such as an efficiency of 22.08% with open-circuit voltage of 0.93 V, short-circuit current of 28.27 mA/cm2, and fill-factor of 82.61% through ZnS as a buffer layer for the copper zinc tin sulfide (CZTS) solar cell. When the absorber layer thickness is between 2 and 4 μm, we can obtain the high efficiency. By choosing the ZnS bandgap between 3.1 and 3.25 eV, the efficiency will be higher as obtained in the proposed study.
Cite this Research Publication : Dakua, P.K., Panda, D.K. (2023). Implementation of Zinc Sulfide (ZnS) as a Suitable Buffer Layer for CZTS Solar Cell from Numerical Analysis. In: Lenka, T.R., Misra, D., Fu, L. (eds) Micro and Nanoelectronics Devices, Circuits and Systems. Lecture Notes in Electrical Engineering, vol 904. Springer, Singapore. https://doi.org/10.1007/978-981-19- 2308-1_2(Scopus )