Publication

Abstract : This article presents an accurate and efficient extraction procedure for microwave frequency small-signal equivalent circuit parameters of AlInN/GaN metal-oxide-semiconductor high electron mobility transistor (MOSHEMT). The parameter extraction technique is based on the combination of conventional and optimization methods using the computer-aided modeling approach. The S-, Y-, and Z- parameters of the model are extracted from extensive dynamic AC simulation of the proposed device. From the extracted Y- and Z- parameters the pad capacitances, parasitic inductances and resistances are extracted by operating the device at low and high frequency pinch-off condition depending upon requirement. Then, the intrinsic elements are extracted quasi analytically by de-embedding the extrinsic parameters. S-parameter simulation of the developed small-signal equivalent circuit model is carried out and is compared with TCAD device simulation results to validate the model. The gradient based optimization approach is used to optimize the small-signal parameters to minimize the error between developed SSEC model and device simulation based s-parameters. The microwave characteristics of optimized SSEC model is carried out (fT = 169 GHz and fmax = 182 GHz) and compared with experimental data available from literature to validate the model.