Publication

Abstract : In this paper, a SiGe pocket n-TFET is designed and its electrical performance is extracted using a TCAD simulator. Initially, a comparative study of input characteristics among conventional TFET (Device 1), intrinsic SiGe pocket TFET (Device 2), and doped SiGe pocket TFET (Device 3) is presented. It is seen that Device 2 shows an improved switching ratio (ION/IOFF) compared to other Devices. Furthermore, the RF/analog performance such as transconductance (gm), output conductance (gd), intrinsic gain (gm/gd), gate capacitance (Cgg), cut-off frequency (fc), transconductance frequency product (TFP), gain frequency product (GFP), and gain transconductance frequency product (GTFP) is reported for the variation in x of SiGe pocket from 0 to 1. The eBTBT rate and electron density are plotted for the variation in x of SiGe pocket Vertical TFET. The results reveal that the increase in x leads to an improvement in RF/analog performance and the tunneling rate in SiGe pocket Vertical TFET.