Year : 2023
Performance Analysis of GaN-FINFET for RFIC Application with Respect to Different FinWidth’s
Cite this Research Publication : Reddy, MN, Panda, DK. Performance analysis of GaN-FINFET for RFIC application with respect to different FinWidth's. Int J Numer Model. 2023;e3098. doi:10.1002/jnm.3098 (SCI )
Year : 2023
Dependence of RF/analog and linearity parameters on ferroelectric layer thickness in ferroelectric tunnel junction dual material double gate (FTJ-DMDG) TFET
Cite this Research Publication : Saha, R., Panda, D. K., & Goswami, R. (2023). Dependence of RF/analog and linearity parameters on ferroelectric layer thickness in ferroelectric tunnel junction dual material double gate (FTJ-DMDG) TFET. Ferroelectrics, 602(1), 204-214. (SCI)
Year : 2023
Analysis of Various Hole Transport Layers (HTLs) on the Performance of CZTS- Solar Cell
Cite this Research Publication : Pratap Kumar Dakua and Deepak Kumar Panda” Analysis of various hole transport layers (HTLs) on the performance of CZTS- solar cell” 2023 Phys. Scr. 98 035110DOI 10.1088/1402-4896/acbbad (SCI )
Publisher : IOP Science
Year : 2023
Investigation on RF/Analog Performance in SiGe Pocket n-Tunnel FET
Cite this Research Publication : Rajesh Saha, Deepak Kumar Panda, Rupam Goswami,” Investigation on RF/Analog Performance in SiGe Pocket n-Tunnel FET”, IETE Journal of Research, 2023(SCI )
Publisher : IETE Journal of Research
Year : 2023
Recent Trends on Junction- Less Field Effect Transistors in Terms of Device Topology, Modeling, and Application
Cite this Research Publication : Pratikhya Raut, Umakanta Nanda, Deepak Kumar Panda,” Recent Trends on Junction- Less Field Effect Transistors in Terms of Device Topology, Modeling, and Application” ECS Journal of Solid State Science and Technology, 2023 DOI 10.1149/2162- 8777/acc35a (SCI )
Publisher : ECS Journal of Solid State Science and Technology
Year : 2023
Performance Analysis of Hetero-dielectric-Based MoS2 FET with Respect to Different Channel Lengths and High K-Values for Dielectric-Modulated Biosensor Application
Cite this Research Publication : Kumar, V.P., Panda, D.K. Performance Analysis of Hetero-dielectric-Based MoS2 FET with Respect to Different Channel Lengths and High K-Values for Dielectric-Modulated Biosensor Application. Braz J Phys 53, 68 (2023). https://doi.org/10.1007/s13538-023- 01285-x(SCI )
Publisher : Braz J Phys
Year : 2023
Analytical drain Current Model Development of Twin Gate TFET in Subthreshold and Super Threshold Regions
Cite this Research Publication : Raut, P., Nanda, U., & Panda, D. K. (2023). Analytical drain current model development of twin gate TFET in subthreshold and super threshold regions. Microelectronics Journal, 135, 105761. (SCI )
Publisher : Elsevier
Year : 2023
Numerical Simulation for the High Efficient Performance Signature of TO/ZnO/In2S3/WS2/CZTS based Solar Cell Structure
Cite this Research Publication : Dakua, P. K., Panda, D. K., Altahan, B. R., Smirani, L. K., Hossain, M. D., & Rashed, A. N. Z. (2023). Numerical simulation for the high efficient performance signature of TO/ZnO/In2S3/WS2/CZTS based solar cell structure. Bulletin of Materials Science, 46(2), 1-9. (SCI )
Publisher : Bulletin of Materials Science
Year : 2023
Improving the efficiency of ZnO/WS2/CZTS1 solar cells using CZTS2 as BSF layer by SCAPS-1D numerical simulation
Cite this Research Publication : Pratap Kumar Dakua and Deepak Kumar Panda” Improving the efficiency of ZnO/WS2/CZTS1 solar cells using CZTS2 as BSF layer by SCAPS-1D numerical simulation” 2023 Phys. Scr. DOI : 10.1088/1402-4896/ace13c (SCI )
Publisher : IOP Journals
Year : 2022
Analytical Modeling of I–V Characteristics using 2D Poisson equations in AlN/β-Ga2O3 HEMT
Cite this Research Publication : R. Singh, T.R. Lenka, D.K. Panda, H.P.T. Nguyen, N. El I. Boukortt, G. Crupi, Analytical modeling of I–V characteristics using 2D Poisson equations in AlN/β-Ga2O3 HEMT,Materials Science in Semiconductor Processing,Volume 145,2022, 106627(SCI )
Publisher : Science Direct
Year : 2022
Review—Next Generation 2D Material Molybdenum Disulfide (MoS2): Properties, Applications and Challenges
Cite this Research Publication : Vydha Pradeep Kumar and Deepak Kumar Panda “Review—Next Generation 2D Material Molybdenum Disulfide (MoS2): Properties, Applications and Challenges” ECS Journal of Solid State Science and Technology, Volume 11, Number 3,2022(SCI )
Publisher : IOPScience
Year : 2022
A Comprehensive Review on FinFET in Terms of its Device Structureand Performance Matrices
Cite this Research Publication : M. Nomitha Reddy & Deepak Kumar Panda “ A Comprehensive Review on FinFET in Terms of its Device Structureand Performance Matrices”Silicon,2022 DOI: https://doi.org/10.1007/s12633-022-01929-8 (SCI )
Year : 2022
Analytical Modelling for Surface Potential of Dual Material Gate Overlapped-on-drain TFET(DM-DMG-TFET) for label-free Biosensing Application
Cite this Research Publication : Nelaturi NagendraReddy, Deepak KumarPanda and RajeshSaha “Analytical modelling for surface potential of dual material gate overlapped-on-drain TFET(DM-DMG-TFET) for label-free biosensing application” AEUE - International Journal of Electronics and Communications, -Apr-2022DOI: https://doi.org/10.1016/j.aeue.2022.154225 (SCI )
Publisher : Elsevier
Year : 2022
Design and Investigation of Dielectric Modulated Triple Metal gate-oxide-stack Z-shaped Gate Horizontal Pocket TFET Device as a Label-free Biosensor
Cite this Research Publication : In this article, a dielectric modulated triple metal gate-oxide-stack Z-shaped gate horizontal source pocket tunnel field-effect transistor (DM-TMGOS-ZHP-TFET) structure has been investigated for the application of label free-biosensor. This work explores the advantage of gate work function engineering along with the gate-oxide-stack approach for the ZHP-TFET for the first time. An asymmetric nano-cavity is created adjacent to the source-channel junction to immobilize the target biomolecules conjugation to the proposed device. The sensitivity of the device is thoroughly investigated in terms of average subthreshold swing (SS), threshold voltage (Vth) and the switching ratio (Ion/Ioff) of the proposed device with the variation of the dielectric constant value inside the nano-gap under the gate electrode. The device characteristics are investigated with different combinations of metal work functions to match the desired feature and sensitivity of the device. In addition, the sensitivity analysis of the proposed device is analyzed in the presence of both positive and negative charged biomolecules in the cavity region to study the charge effect on label-free detection of the device. A comparative study is conducted between a single metal gate (SMG) ZHP-DM-TFET biosensor with the DM-TMGOS-ZHP-TFET biosensor explores the advantage of gate-work function engineering with a gate-oxide-stack approach. Interestingly the DM-TMGOS-ZHP-TFET biosensor shows superior results with a high current ratio sensitivity of 103 which is ten times more than the SMG-ZHP-DM-TFET biosensor and this device also exhibits low subthreshold characteristics.
Publisher : IOP Science
Year : 2022
Analytical Modeling of Dielectric Modulated Negative Capacitance MoS2 field Effect Transistor for Next-generation Label-free Biosensor
Cite this Research Publication : Panda, DK, Lenka, TR, Singh, R, Goyal, V, Boukortt, NEI, Nguyen, HPT. Analytical modeling of dielectric modulated negative capacitance MoS2 field effect transistor for next-generation label-free biosensor. Int J Numer Model. 2022;e3060. doi:10.1002/jnm.3060 (SCI )
Publisher : Analytical Modeling of Dielectric Modulated Negative Capacitance MoS2 field Effect Transistor for Next-generation Label-free Biosensor
Year : 2022
Influence of Dopants in Buffer Layer on CZTS Solar cell Performance
Cite this Research Publication : Dakua, P. K., & Panda, D. K. (2022). Influence of dopants in buffer layer on CZTS solar cell performance. Emerging Materials Research, 1-12. (SCI )
Publisher : ICE Virtual Library
Year : 2022
Dependence of RF/analog and Linearity Parameters on Ferroelectric Layer Thickness in Ferroelectric Tunnel Junction Dual Material Double Gate (FTJ-DMDG) TFET
Cite this Research Publication : Saha, R., Panda, D. K., & Goswami, R. (2023). Dependence of RF/analog and linearity parameters on ferroelectric layer thickness in ferroelectric tunnel junction dual material double gate (FTJ-DMDG) TFET. Ferroelectrics, 602(1), 204-214. (SCI )
Year : 2022
RF with Linearity and non-linearity Parameter Analysis of Gate all Around Negative Capacitance Junction less FET (GAA-NC-JLFET) for Different Ferroelectric Thickness
Cite this Research Publication : Raut, P., Nanda, U., & Panda, D. K. (2022). RF with linearity and non-linearity parameter analysis of gate all around negative capacitance junction less FET (GAA-NC-JLFET) for different ferroelectric thickness. Physica Scripta, 97(10), 105809. (SCI )
Publisher : IOP Science
Year : 2022
Analysis on Electrical Parameters Including Temperature and Interface trap Charges in Gate Overlap Ge Source Step Shape Double Gate TFET
Cite this Research Publication : Saha, R., Goswami, R., & Panda, D. K. (2022). Analysis on electrical parameters including temperature and interface trap charges in gate overlap Ge source step shape double gate TFET. Microelectronics Journal, 130, 105629. (SCI )
Publisher : Elsevier
Year : 2021
A Comprehensive Review on High Electron Mobility Transistor (HEMT) Based Biosensors: Recent Advances and Future Prospects and its Comparison with Si-Based Biosensor
Cite this Research Publication : Hemaja, V., and D. K. Panda. "A comprehensive review on high electron mobility transistor (HEMT) Based biosensors: recent advances and future prospects and its comparison with Si-based biosensor." Silicon (2021): 1-14. (SCI )
Publisher : Springer
Year : 2021
Dielectric Modulated Enhancement Mode N-Polar GaN MIS-HEMT Biosensor for Label Free Detection
Cite this Research Publication : Hemaja, V., and D. K. Panda. "Dielectric Modulated Enhancement Mode N-Polar GaN MIS-HEMT Biosensor for Label Free Detection." ECS Journal of Solid State Science and Technology 10.3 (2021): 035006. (SCI )
Publisher : IOPScience
Year : 2021
Analysis on effect of lateral straggle on analog, high frequency and DC parameters in Ge‐source DMDG TFET
Cite this Research Publication : Saha, Rajesh, Deepak Kumar Panda, Rupam Goswami, Brinda Bhowmick, and Srimanta Baishya. "Analysis on effect of lateral straggle on analog, high frequency and DC parameters in Ge‐source DMDG TFET." International Journal of RF and Microwave Computer‐Aided Engineering 31, no. 4 (2021): e22579. (SCI )
Publisher : Wiley Online Library
Year : 2021
DC and RF/analog parameters in Ge-source split drain-ZHP-TFET: Drain and pocket engineering technique
Cite this Research Publication : Saha, R, Panda, DK, Goswami, R, Bhowmick, B, Baishya, S. DC and RF/analog parameters in Ge-source split drain-ZHP-TFET: Drain and pocket engineering technique. Int J Numer Model. 2021;e2967. doi:10.1002/jnm.2967(SCI )
Publisher : Wiley Online Library
Year : 2021
Nanowire Gate all Around-TFET- based Biosensor by Considering Ambipolar Transport
Cite this Research Publication : Reddy, N. Nagendra, and Deepak Kumar Panda. "Nanowire gate all around-TFET- based biosensor by considering ambipolar transport." Applied Physics A 127.9 (2021): 1-9. (SCI )
Publisher : Springer
Year : 2021
Performance Analysis of Z‐shaped Gate Dielectric Modulated (DM) Tunnel field‐effect transistor‐(TFET) based biosensor with extended horizontal N+ pocket
Cite this Research Publication : Reddy, N. Nagendra, and Deepak Kumar Panda. "Performance analysis of Z‐shaped gate dielectric modulated (DM) tunnel field‐effect transistor‐(TFET) based biosensor with extended horizontal N+ pocket." International Journal of Numerical Modelling: Electronic Networks, Devices and Fields (2021): e2908. (SCI )
Publisher : Wiley Online Library
Year : 2021
Investigation of β-Ga2O3- based HEMTs using 2D Simulations for Low Noise Amplification and RF Applications
Cite this Research Publication : Singh, R., T. R. Lenka, D. K. Panda, and H. P. T. Nguyen. "Investigation of β-Ga2O3- based HEMTs using 2D Simulations for low noise amplification and RF applications." Engineering Research Express 3, no. 3 (2021): 035042. (ESCI, Scopus )
Publisher : IOPScience
Year : 2020
The Dawn of Ga2O3 HEMTs for High Power Electronics-A Review
Cite this Research Publication : Singh, R., T. R. Lenka, D. K. Panda, R. T. Velpula, B. Jain, H. Q. T. Bui, and H. P. T. Nguyen. "The dawn of Ga2O3 HEMTs for high power electronics-A review." Materials Science in Semiconductor Processing 119 (2020): 105216. (SCI )
Publisher : Science Direct
Year : 2020
Rapid Detection of Biomolecules in a Junction Less Tunnel Field-Effect Transistor (JL-TFET) Biosensor
Cite this Research Publication : Peesa, Rohit Bhargav, and Deepak Kumar Panda. "Rapid Detection of Biomolecules in a Junction Less Tunnel Field-Effect Transistor (JL-TFET) Biosensor." Silicon (2021): 1-7. (SCI )
Publisher : Springer
Year : 2020
A Comprehensive Review on Tunnel field-effect Transistor (TFET) based Biosensors: Recent Advances and Future Prospects on Device Structure and sensitivity
Cite this Research Publication : Reddy, N. Nagendra, and Deepak Kumar Panda. "A comprehensive review on tunnel field-effect transistor (TFET) based biosensors: recent advances and future prospects on device structure and sensitivity." Silicon (2020): 1-16. (SCI )
Publisher : Springer
Year : 2020
Simulation Study of Dielectric Modulated Dual Material Gate TFET Based Biosensor by Considering Ambipolar Conduction
Cite this Research Publication : Reddy, N. Nagendra, and Deepak Kumar Panda. "Simulation Study of Dielectric Modulated Dual Material Gate TFET Based Biosensor by Considering Ambipolar Conduction." Silicon (2020): 1-7. (SCI )
Publisher : Springer
Year : 2020
Single and double-gate based AlGaN/GaN MOS-HEMTs for the design of low-noise amplifiers: a comparative study
Cite this Research Publication : Panda, Deepak Kumar, Rajan Singh, Trupti Ranjan Lenka, Thi Tan Pham, Ravi Teja Velpula, Barsha Jain, Ha Quoc Thang Bui, and Hieu Pham Trung Nguyen. "Single and double-gate based AlGaN/GaN MOS-HEMTs for the design of low-noise amplifiers: a comparative study." IET Circuits, Devices & Systems 14, no. 7 (2020): 1018-1025. (SCI )
Year : 2019
Linearity Improvement in E-mode Ferroelectric GaN MOS-HEMT using Dual Gate Technology
Cite this Research Publication : Panda, Deepak Kumar, and Trupti Ranjan Lenka. "Linearity improvement in E-mode ferroelectric GaN MOS-HEMT using dual gate technology." Micro & Nano Letters 14.6 (2019): 618-622. (SCI )
Year : 2018
Microwave frequency small-signal equivalent circuit parameter extraction for AlInN/GaN MOSHEMT
Cite this Research Publication : Amarnath, G., D. K. Panda, and T. R. Lenka. "Microwave frequency small‐signal equivalent circuit parameter extraction for AlInN/GaN MOSHEMT." International Journal of RF and Microwave Computer‐Aided Engineering 28.2 (2018): e21179. (SCI )
Year : 2018
Compact thermal Noise Model for Enhancement Mode N-polar GaN MOS-HEMT including 2DEG density solution with two sub-bands
Cite this Research Publication : Panda, Deepak Kumar, and Trupti Ranjan Lenka. "Compact thermal noise model for enhancement mode N-polar GaN MOS-HEMT including 2DEG density solution with two sub-bands." IET Circuits, Devices & Systems 12.6 (2018): 810-816. (SCI )
Year : 2018
Modeling and Simulation of DC and microwave characteristics of AlInN(AlGaN)/AlN/GaN MOSHEMTs with different Gate Lengths
Cite this Research Publication : Amarnath, G., D. K. Panda, and T. R. Lenka. "Modeling and simulation of DC and microwave characteristics of AlInN (AlGaN)/AlN/GaN MOSHEMTs with different gate lengths." International Journal of Numerical Modelling: Electronic Networks, Devices and Fields 32.1 (2019): e2456. (SCI )
Publisher : Wiley Online Library
Year : 2018
Small-signal model parameter extraction of E-mode N-polar GaN MOS-HEMT using optimization algorithms and its comparison
Cite this Research Publication : Panda, D. K., G. Amarnath, and T. R. Lenka. "Small-signal model parameter extraction of E-mode N-polar GaN MOS-HEMT using optimization algorithms and its comparison." Journal of Semiconductors 39.7 (2018): 074001. (ESCI, Scopus )
Publisher : IOPScience
Year : 2017
Modeling and simulation of enhancement mode p-GaN Gate AlGaN/GaN HEMT for RF circuit switch applications
Cite this Research Publication : Panda, D. K., and T. R. Lenka. "Modeling and simulation of enhancement mode p-GaN Gate AlGaN/GaN HEMT for RF circuit switch applications." Journal of Semiconductors 38.6 (2017): 064002. (ESCI, Scopus )
Publisher : IOPScience
Year : 2017
Effects of trap density on drain current LFN and its model development for E-mode GaN MOS-HEMT
Cite this Research Publication : Panda, D. K., and T. R. Lenka. "Effects of trap density on drain current LFN and its model development for E-mode GaN MOS-HEMT." Superlattices and Microstructures 112 (2017): 374-382. (SCI )
Publisher : ScienceDirect
Year : 2017
Oxide thickness dependent compact model of channel noise for E-mode AlGaN/GaN MOS-HEMT
Cite this Research Publication : Panda, D. K., and T. R. Lenka. "Oxide thickness dependent compact model of channel noise for E-mode AlGaN/GaN MOS-HEMT." AEU-International Journal of Electronics and Communications 82 (2017): 467-473. (SCI )
Publisher : ScienceDirect